Graphene and two-dimensional materials for silicon technology

D Akinwande, C Huyghebaert, CH Wang, MI Serna… - Nature, 2019 - nature.com
The development of silicon semiconductor technology has produced breakthroughs in
electronics—from the microprocessor in the late 1960s to early 1970s, to automation …

Synthesis, structure and applications of graphene-based 2D heterostructures

P Solís-Fernández, M Bissett, H Ago - Chemical Society Reviews, 2017 - pubs.rsc.org
With the profuse amount of two-dimensional (2D) materials discovered and the
improvements in their synthesis and handling, the field of 2D heterostructures has gained …

[HTML][HTML] Production and processing of graphene and related materials

C Backes, AM Abdelkader, C Alonso… - 2D …, 2020 - iopscience.iop.org
We present an overview of the main techniques for production and processing of graphene
and related materials (GRMs), as well as the key characterization procedures. We adopt …

2D III‐Nitride Materials: Properties, Growth, and Applications

J Ben, X Liu, C Wang, Y Zhang, Z Shi, Y Jia… - Advanced …, 2021 - Wiley Online Library
Abstract 2D III‐nitride materials have been receiving considerable attention recently due to
their excellent physicochemical properties, such as high stability, wide and tunable …

Mechanisms and applications of steady-state photoluminescence spectroscopy in two-dimensional transition-metal dichalcogenides

M Tebyetekerwa, J Zhang, Z Xu, TN Truong, Z Yin… - ACS …, 2020 - ACS Publications
Two-dimensional (2D) transition-metal dichalcogenide (TMD) semiconductors exhibit many
important structural and optoelectronic properties, such as strong light–matter interactions …

Epitaxial growth of two-dimensional layered transition metal dichalcogenides

TH Choudhury, X Zhang, ZY Al Balushi… - Annual Review of …, 2020 - annualreviews.org
Transition metal dichalcogenide (TMD) monolayers and heterostructures have emerged as
a compelling class of materials with transformative properties that may be harnessed for …

Direct evidence for efficient ultrafast charge separation in epitaxial WS2/graphene heterostructures

S Aeschlimann, A Rossi, M Chávez-Cervantes… - Science …, 2020 - science.org
We use time-and angle-resolved photoemission spectroscopy (tr-ARPES) to investigate
ultrafast charge transfer in an epitaxial heterostructure made of monolayer WS2 and …

Ultrafast hot carrier transfer in WS2/graphene large area heterostructures

C Trovatello, G Piccinini, S Forti, F Fabbri… - npj 2D Materials and …, 2022 - nature.com
Charge transfer processes in two-dimensional van der Waals heterostructures enable
upconversion of low energy photons and efficient charge carriers extraction. Here we use …

Superlubricity of epitaxial monolayer WS2 on graphene

H Büch, A Rossi, S Forti, D Convertino, V Tozzini… - Nano Research, 2018 - Springer
We report the superlubric sliding of monolayer tungsten disulfide (WS 2) on epitaxial
graphene (EG) grown on silicon carbide (SiC). Single-crystalline WS 2 flakes with lateral …

Electronic properties of single-layer tungsten disulfide on epitaxial graphene on silicon carbide

S Forti, A Rossi, H Büch, T Cavallucci, F Bisio, A Sala… - Nanoscale, 2017 - pubs.rsc.org
This work reports an electronic and micro-structural study of an appealing system for
optoelectronics: tungsten disulfide (WS2) on epitaxial graphene (EG) on SiC (0001). The …