(57) ABSTRACT A semiconductor device includes a substrate, an integrated passive device
(IPD), and a phase-change material (PCM) radio frequency (RF) switch. The PCM RF switch …

Switches, breakers that incorporate a phase change material are disclosed, as well as
electrical devices including the same. A switch includes a first conductor, a second …

A magnetoresistive element according to an embodiment includes: a first layer containing
nitrogen; a reference layer opposed to the first layer, the reference layer having a …

A semiconductor device includes a substrate and a phase-change material (PCM) radio
frequency (RF) switch, having a heating element, a PCM situated over the heating element …

US10916540B2 - Device including PCM RF switch integrated with group III-V semiconductors
- Google Patents US10916540B2 - Device including PCM RF switch integrated with group …

An acoustically coupled RF filter system includes, in part, a first conductive layer, a
ferroelectric layer, and a second conductive layer, wherein the second conductive layer …

A microelectromechanical resonator device is provided having two-dimensional resonant
rods. The resonator device has a piezoelectric layer formed with a plurality of alternating …

(57) ABSTRACT A resonator device may include a stacked first resonator and second
resonator. The first resonator may be configured to resonate at a first operating frequency …

A MEMS device including an active layer having a first surface and a second surface is
provided. A first electrode and a second electrode, and at least one reconfigurable electrode …

In tuning a radio frequency (RF) module including a non-volatile tunable RF filter, a desired
frequency and an undesired frequency being provided by an amplifier of the RF module are …