Logical modelling of delay degradation effect in static CMOS gates
A delay model for static CMOS gates with application in gate level logic simulation is
presented. It incorporates the degradation effect on narrow pulses and is named PID (pure …
presented. It incorporates the degradation effect on narrow pulses and is named PID (pure …
[PDF][PDF] Modeling the effects of temporal proximity of input transitions on gate propagation delay and transition time
V Chandramouli, KA Sakallah - Proceedings of the 33rd Annual Design …, 1996 - dl.acm.org
While delay modeling of gates with a single switching input has received considerable
attention, the case of multiple inputs switching in close temporal proximity is just beginning …
attention, the case of multiple inputs switching in close temporal proximity is just beginning …
Slope propagation in static timing analysis
D Blaauw, V Zolotov… - IEEE Transactions on …, 2002 - ieeexplore.ieee.org
Static timing analysis has traditionally used the PERT method for identifying the critical path
of a circuit. The authors show in this paper that due to the influence of the transition time of a …
of a circuit. The authors show in this paper that due to the influence of the transition time of a …
[图书][B] Logic-timing simulation and the degradation delay model
MJ Bellido, JJ Chico, M Valencia - 2005 - books.google.com
This book provides the reader with an extensive background in the field of logic-timing
simulation and delay modeling. It includes detailed information on the challenges of logic …
simulation and delay modeling. It includes detailed information on the challenges of logic …
Modeling and mitigating NBTI in nanoscale circuits
S Khan, S Hamdioui - 2011 IEEE 17th International On-Line …, 2011 - ieeexplore.ieee.org
As semiconductor manufacturing has entered into nanoscale era, performance degradation
due to Negative Bias Temperature Instability (NBTI) became one of the major threats to …
due to Negative Bias Temperature Instability (NBTI) became one of the major threats to …
Fingerprinting using fine timing measurement
J Henry, N Montavont - Proceedings of the 17th ACM International …, 2019 - dl.acm.org
The time-of-flight based ranging mechanism defined in 802.11-2016 offers a range of
parameters too rich to be implemented with similar pattern among vendors, unless further …
parameters too rich to be implemented with similar pattern among vendors, unless further …
Inertial and degradation delay model for CMOS logic gates
J Juan-Chico, PR de Clavijo, MJ Bellido… - … on Circuits and …, 2000 - ieeexplore.ieee.org
The authors present the Inertial and Degradation Delay Model (IDDM) for CMOS digital
simulation. The model combines the degradation delay model presented in previous papers …
simulation. The model combines the degradation delay model presented in previous papers …
A finite-point method for efficient gate characterization under multiple input switching
Timing characterization of standard cells is one of the essential steps in VLSI design. The
traditional static timing analysis (STA) tool assumes single input switching models for the …
traditional static timing analysis (STA) tool assumes single input switching models for the …
Degradation delay model extension to CMOS gates
J Juan-Chico, MJ Bellido, P Ruiz-de-Clavijo… - Integrated Circuit Design …, 2000 - Springer
This contribution extends the Degradation Delay Model (DDM), previously developed for
CMOS inverters, to simple logic gates. A gate-level approach is followed. At a first stage, all …
CMOS inverters, to simple logic gates. A gate-level approach is followed. At a first stage, all …
Indoor Location: study on the IEEE 802.11 Fine Timing Measurement standard
J Henry - 2021 - theses.hal.science
Indoor location remains challenging. GPS and cellular signals do not alwayspenetrate
buildings well, and legacy techniques that relied in Wi-Fi broadcasts have lost their luster …
buildings well, and legacy techniques that relied in Wi-Fi broadcasts have lost their luster …