This review critically evaluates the suitability of Auger spectral line shape analysis as a
source of electronic structure information. Methods for extracting the true Auger line shape …

Low‐energy Ar+‐induced modifications of III–V semiconductor (110) surfaces have been
investigated. XPS, angle‐resolved AES and Auger profiles have been used to check the in …

A detailed study at room temperature of the interfaces between thin alkali films and cleaved
or sputtered processed (110) surfaces of GaAs and InP has been performed using Auger …

Abstract The GaP (110)/Yb interface was studied with use of synchrotron radiation to excite
the Ga 3d and the P 2p semiconductor core levels, the quasiatomic Yb 4f states together …

We measure the Schottky-barrier formation and the surface photovoltage induced by
synchrotron radiation by complementing photoemission measurements with a Kelvin probe …

We have studied the evolution of the GaP (110)/Cu interface as prepared at room-
temperature (RT) versus low-temperature (LT≊ 100 K) conditions. Electron-excited PL 2, 3 …

A joint experimental and theoretical investigation of the PL2. 3VV Auger transition on GaP
(110) is presented. The theoretical data, calculated within a pure band-like picture, are …

Temperature-dependent Cu interface growth on GaP(110) via Auger lineshape and X-ray
photoemission spectroscopies - NASA/ADS Now on home page ads icon ads Enable full …