A comprehensive review on emerging artificial neuromorphic devices

J Zhu, T Zhang, Y Yang, R Huang - Applied Physics Reviews, 2020 - pubs.aip.org
The rapid development of information technology has led to urgent requirements for high
efficiency and ultralow power consumption. In the past few decades, neuromorphic …

Carbon nanodots memristor: An emerging candidate toward artificial biosynapse and human sensory perception system

C Zhang, M Chen, Y Pan, Y Li, K Wang… - Advanced …, 2023 - Wiley Online Library
In the era of big data and artificial intelligence (AI), advanced data storage and processing
technologies are in urgent demand. The innovative neuromorphic algorithm and hardware …

Growth, dielectric properties, and memory device applications of ZrO2 thin films

D Panda, TY Tseng - Thin Solid Films, 2013 - Elsevier
In the advancement of complementary metal-oxide-semiconductor device technology, SiO2
was used as an outstanding dielectric and has dominated the microelectronics industry for …

One-dimensional ZnO nanostructures: fabrication, optoelectronic properties, and device applications

D Panda, TY Tseng - Journal of Materials Science, 2013 - Springer
Abstract One-dimensional (1D) zinc oxide (ZnO) nanostructures have been extensively and
intensively studied for several decades not only for their extraordinary chemical and physical …

A collective study on modeling and simulation of resistive random access memory

D Panda, PP Sahu, TY Tseng - Nanoscale research letters, 2018 - Springer
In this work, we provide a comprehensive discussion on the various models proposed for the
design and description of resistive random access memory (RRAM), being a nascent …

Influence of oxygen vacancies in ALD HfO2-x thin films on non-volatile resistive switching phenomena with a Ti/HfO2-x/Pt structure

AS Sokolov, YR Jeon, S Kim, B Ku, D Lim, H Han… - Applied Surface …, 2018 - Elsevier
We report a modulation of oxygen vacancies profile in atomic layer deposition (ALD) HfO 2-x
thin films by reducing oxidant pulse time (0.7 s–0.1 s) and study its effect on resistive …

Perovskite oxides as resistive switching memories: a review

D Panda, TY Tseng - Ferroelectrics, 2014 - Taylor & Francis
Numerous metal-insulator-metal systems demonstrate electrically induced resistive
switching effects and have therefore been proposed as the basis for future nonvolatile …

All oxide based flexible multi-folded invisible synapse as vision photo-receptor

PX Chen, D Panda, TY Tseng - Scientific reports, 2023 - nature.com
All oxide-based transparent flexible memristor is prioritized for the potential application in
artificially simulated biological optoelectronic synaptic devices. SnOx memristor with HfOx …

Performance improvement of resistive switching memory achieved by enhancing local-electric-field near electromigrated Ag-nanoclusters

ZQ Wang, HY Xu, L Zhang, XH Li, JG Ma, XT Zhang… - Nanoscale, 2013 - pubs.rsc.org
By introducing Ag nanoclusters (NCs), ZnO-based resistive switching memory devices offer
improved performance, including improved uniformity of switching parameters, and …

Multilevel switching in Mg-doped HfOx memristor through the mutual-ion effect

LH Li, KH Xue, LQ Zou, JH Yuan, H Sun… - Applied Physics …, 2021 - pubs.aip.org
HfO x memristor is one of the most promising candidates for nonvolatile memory and
neuromorphic computing applications, but for the latter, its gradual conduction modulation …