A comprehensive review on emerging artificial neuromorphic devices
The rapid development of information technology has led to urgent requirements for high
efficiency and ultralow power consumption. In the past few decades, neuromorphic …
efficiency and ultralow power consumption. In the past few decades, neuromorphic …
Carbon nanodots memristor: An emerging candidate toward artificial biosynapse and human sensory perception system
In the era of big data and artificial intelligence (AI), advanced data storage and processing
technologies are in urgent demand. The innovative neuromorphic algorithm and hardware …
technologies are in urgent demand. The innovative neuromorphic algorithm and hardware …
Growth, dielectric properties, and memory device applications of ZrO2 thin films
D Panda, TY Tseng - Thin Solid Films, 2013 - Elsevier
In the advancement of complementary metal-oxide-semiconductor device technology, SiO2
was used as an outstanding dielectric and has dominated the microelectronics industry for …
was used as an outstanding dielectric and has dominated the microelectronics industry for …
One-dimensional ZnO nanostructures: fabrication, optoelectronic properties, and device applications
D Panda, TY Tseng - Journal of Materials Science, 2013 - Springer
Abstract One-dimensional (1D) zinc oxide (ZnO) nanostructures have been extensively and
intensively studied for several decades not only for their extraordinary chemical and physical …
intensively studied for several decades not only for their extraordinary chemical and physical …
A collective study on modeling and simulation of resistive random access memory
In this work, we provide a comprehensive discussion on the various models proposed for the
design and description of resistive random access memory (RRAM), being a nascent …
design and description of resistive random access memory (RRAM), being a nascent …
Influence of oxygen vacancies in ALD HfO2-x thin films on non-volatile resistive switching phenomena with a Ti/HfO2-x/Pt structure
We report a modulation of oxygen vacancies profile in atomic layer deposition (ALD) HfO 2-x
thin films by reducing oxidant pulse time (0.7 s–0.1 s) and study its effect on resistive …
thin films by reducing oxidant pulse time (0.7 s–0.1 s) and study its effect on resistive …
Perovskite oxides as resistive switching memories: a review
D Panda, TY Tseng - Ferroelectrics, 2014 - Taylor & Francis
Numerous metal-insulator-metal systems demonstrate electrically induced resistive
switching effects and have therefore been proposed as the basis for future nonvolatile …
switching effects and have therefore been proposed as the basis for future nonvolatile …
All oxide based flexible multi-folded invisible synapse as vision photo-receptor
PX Chen, D Panda, TY Tseng - Scientific reports, 2023 - nature.com
All oxide-based transparent flexible memristor is prioritized for the potential application in
artificially simulated biological optoelectronic synaptic devices. SnOx memristor with HfOx …
artificially simulated biological optoelectronic synaptic devices. SnOx memristor with HfOx …
Performance improvement of resistive switching memory achieved by enhancing local-electric-field near electromigrated Ag-nanoclusters
By introducing Ag nanoclusters (NCs), ZnO-based resistive switching memory devices offer
improved performance, including improved uniformity of switching parameters, and …
improved performance, including improved uniformity of switching parameters, and …
Multilevel switching in Mg-doped HfOx memristor through the mutual-ion effect
HfO x memristor is one of the most promising candidates for nonvolatile memory and
neuromorphic computing applications, but for the latter, its gradual conduction modulation …
neuromorphic computing applications, but for the latter, its gradual conduction modulation …