Recent advances in 2D lateral heterostructures

J Wang, Z Li, H Chen, G Deng, X Niu - Nano-Micro Letters, 2019 - Springer
Recent developments in synthesis and nanofabrication technologies offer the tantalizing
prospect of realizing various applications from two-dimensional (2D) materials. A …

Graphene/WSeTe van der Waals heterostructure: Controllable electronic properties and Schottky barrier via interlayer coupling and electric field

TV Vu, NV Hieu, HV Phuc, NN Hieu, HD Bui… - Applied Surface …, 2020 - Elsevier
The formation of the graphene-based van der Waals (vdW) heterostructures has shown
great potential for designing novel electronic and optoelectronic nanodevices. Here, we …

Layered graphene/GaS van der Waals heterostructure: controlling the electronic properties and Schottky barrier by vertical strain

KD Pham, NN Hieu, HV Phuc, IA Fedorov… - Applied Physics …, 2018 - pubs.aip.org
In this work, we construct an ultrathin graphene/GaS heterostructure and investigate its
electronic properties as well as the effect of vertical strain using density functional theory …

Enhanced photocatalytic performance of a stable type–II PtSe 2/GaSe van der Waals heterostructure

PR Parmar, SJ Khengar, Y Sonvane… - Physical Chemistry …, 2023 - pubs.rsc.org
In this investigation, the structural, electronic, and optical properties of two-dimensional van
der Waals heterostructure (vdwHS) PtSe2/GaSe with three different configurations have …

Interlayer coupling and electric field controllable Schottky barriers and contact types in graphene/ heterostructures

CV Nguyen, M Idrees, HV Phuc, NN Hieu, NTT Binh… - Physical Review B, 2020 - APS
Van der Waals heterostructures, created by putting graphene on other two-dimensional
semiconducting materials, have become an effective strategy to enhance the physical …

Effect of electric field and vertical strain on the electro-optical properties of the MoSi2N4 bilayer: A first-principles calculation

A Bafekry, C Stampfl, M Naseri, MM Fadlallah… - Journal of Applied …, 2021 - pubs.aip.org
Recently, a two-dimensional (2D) MoSi 2 N 4 (MSN) structure has been successfully
synthesized [Hong et al., Science 369 (6504), 670–674 (2020)]. Motivated by this result, we …

Electronic and optical properties of a Janus SnSSe monolayer: effects of strain and electric field

HTT Nguyen, VV Tuan, CV Nguyen, HV Phuc… - Physical Chemistry …, 2020 - pubs.rsc.org
In this paper, detailed investigations of the electronic and optical properties of a Janus
SnSSe monolayer under a biaxial strain and electric field using ab initio methods are …

Electronic and optical properties of janus MoSSe and ZnO vdWs heterostructures

Z Cui, K Bai, Y Ding, X Wang, E Li, J Zheng… - Superlattices and …, 2020 - Elsevier
The structural stability, band structures, and optical absorption behaviors of MoSSe/ZnO
vdWs heterostructures have been investigated by employing density functional theory based …

Highly Sensitive Band Alignment of the Graphene/MoSi2N4 Heterojunction via an External Electric Field

G Yuan, Z Cheng, Y Cheng, W Duan, H Lv… - ACS Applied …, 2022 - ACS Publications
The combination of graphene (GR) and monolayer MoSi2N4 has attracted much attention;
however, the comprehension of its electrical contact modulation is still not fully explored …

Graphene/g-GeC bilayer heterostructure: Modulated electronic properties and interface contact via external vertical strains and electric fileds

X Gao, Y Shen, Y Ma, S Wu, Z Zhou - Carbon, 2019 - Elsevier
Using DFT calculations, we perform the modulated electronic properties and interface
contact in the graphene/GeC heterostructure by tuning the interlayer spacing, along with the …