Investigation of self-heating effects in UTBB FD-SOI MOSFETs by a modified thermal conductivity model
Q Xing, Y Su, J Lai, B Li, B Li, J Bu… - IEEE Transactions on …, 2022 - ieeexplore.ieee.org
In this article, an analytical thermal conductivity model considering the degradation caused
by the different phonon scattering mechanisms is presented for studying the self-heating …
by the different phonon scattering mechanisms is presented for studying the self-heating …
Analysis of standard-MOS and ultra-low-power diodes composed by SOI UTBB transistors
The main objective of this work is to present an analysis of the performance of Ultra-Thin-
Body and Buried Oxide transistors working as Ultra-Low-Power and standard-nMOS diodes …
Body and Buried Oxide transistors working as Ultra-Low-Power and standard-nMOS diodes …
Analysis of a 10T Full Adder with a new 4T X-NOR using FD-SOI 22nm Mix-VT Technology
Massive technological advancements are done on VLSI regarding propagation delay,
performance analysis, and reducing channel length. As a result, electronic devices are …
performance analysis, and reducing channel length. As a result, electronic devices are …
Ultra-low-power diodes composed by SOI UTBB transistors
The main objective of this work is to present an analysis of the performance of Ultra-Thin-
Body and Buried Oxide transistors working as Ultra-Low-Power diodes. The implementation …
Body and Buried Oxide transistors working as Ultra-Low-Power diodes. The implementation …
Cross-coupling effects in common-source current mirrors composed by UTBB transistors
FJ da Costa, R Trevisoli, RT Doria - Solid-State Electronics, 2022 - Elsevier
This work performs an analysis of the cross-coupling effects influence on the performance of
current mirrors composed by advanced UTBB SOI MOSFETs through 3D numerical …
current mirrors composed by advanced UTBB SOI MOSFETs through 3D numerical …
SOI UTBB Capacitive Cross-Coupling Effects in Ultimate Technological Nodes
The main objective of this work is to carry out an analysis of the effects of cross-coupling in a
system composed of SOI UTBB MOSFETs in ultimate integration nodes through numerical …
system composed of SOI UTBB MOSFETs in ultimate integration nodes through numerical …