This paper reviews the current status Silicon-On-Insulator (SOI) devices and technologies for
high voltage integrated circuits (HVICs) and discusses new trends in the field. The paper …

NXP's family of SOI-based advanced bipolar CMOS DMOS (A-BCD) technologies is
presented. The technology is very successful in automotive, audio and power applications …

A-BCD is a family of 100 V BCD processes on SOI offering latchup free operation, improved
robustness, superior EMC performance, higher packing density, lower mask count, high …

A close analysis of the universality of OFF-state hot carrier degradation (HCI) in drain-
extended transistors suggests that on-state HCI degradation should likewise be universal. In …

A 3-D simulation of substrate currents is crucial to analyze parasitic coupling effects due to
minority carrier injection in smart power ICs. In this paper, a substrate parasitic extraction …

The performance of the unbiased guard ring structure is measured and the effects of high
current, emitter area, and layout of unbiased guard rings are reported and explained …

Degradation of lateral diffused MOS transistors in various hot-carrier stress modes is
investigated. A novel three-region charge-pumping technique is proposed to characterize …

The current status of high-voltage power semiconductor devices and technologies for high-
voltage integrated circuits is reviewed and the new trends in this field are discussed. The …

In this paper, we describe and characterize a parasitic current, called substrate current
injection in a SMART POWER technology. This parasitic current occurs when a normally …

Minority-carrier injection is one of the major causes of redesign in Smart Power technology.
This parasitic current generated during the power stage turn off can be the source of …