In this paper, a novel structure of double gate tunnel FET has been proposed and simulated
for biosensing applications. The device uses III-V compound semiconductors and an n+ …

This article presents a novel structure for efficient label free biosensing applications. The
proposed device comprises of 6H-Silicon Carbide based double gate Schottky Barrier FET …

In this work, we demonstrate the realization of L-Shaped Schottky Barrier FET as a
biosensing device with improved sensitivity. The proposed device uses dual material gate …

The Schottky tube field-effect transistor (ST-FET) analytical model for surface potential,
electric field, and subthreshold current evolved using the superposition method. The surface …

This work proposes a novel double gate hetero‐material tunnel field effect transistor for label
free biosensing applications. The device consists of III‐V semiconductor gallium arsenide …

The rapid advancement in nanoscale devices demands innovative gate dielectric materials
to replace traditional Silicon dioxide. This paper investigates the electrical behavior and …

A new structure for PNPN tunnel field-effect transistors (TFETs) has been designed and
simulated in this work. The proposed structure incorporates the polarity bias concept and the …

This work presents the design and simulation of a novel double-gate L-shaped Schottky
barrier MOSFET (DG-LS-SB-MOSFET). The device uses a low work function metal near …

The scaling of silicon based doped devices has reached to verge of its limits because of the
severity of short channel effects, increment in source/drain resistance, abrupt doping profile …

Junctionless metal–oxide‐semiconductor field‐effect transistors (MOSFETs) have emerged
as a promising alternative to conventional MOSFETs, offering simplified fabrication and …