[HTML][HTML] Recent progress in optoelectronic memristors for neuromorphic and in-memory computation
Neuromorphic computing has been gaining momentum for the past decades and has been
appointed as the replacer of the outworn technology in conventional computing systems …
appointed as the replacer of the outworn technology in conventional computing systems …
Light-gated memristor with integrated logic and memory functions
Memristive devices are able to store and process information, which offers several key
advantages over the transistor-based architectures. However, most of the two-terminal …
advantages over the transistor-based architectures. However, most of the two-terminal …
Tailoring the electrical homogeneity, large memory window, and multilevel switching properties of HfO2-based memory through interface engineering
Two-terminal resistive switching (RS) memories have attracted considerable interest for use
in storage class memory and in-memory computing applications. However, resistive random …
in storage class memory and in-memory computing applications. However, resistive random …
Neurosynaptic-like behavior of Ce-doped BaTiO3 ferroelectric thin film diodes for visual recognition applications
F Ye, XG Tang, JY Chen, WM Zhong, L Zhang… - Applied Physics …, 2022 - pubs.aip.org
Brain-like neuromorphic computing networks based on the human brain information
processing model are gradually breaking down the memory barriers caused by traditional …
processing model are gradually breaking down the memory barriers caused by traditional …
[HTML][HTML] Grain boundary passivation via balancing feedback of hole barrier modulation in HfO2-x for nanoscale flexible electronics
Flexible electronics has attracted considerable attention owing to its enormous potential for
practical applications in various fields. However, the massive strain produced during …
practical applications in various fields. However, the massive strain produced during …
Effect of variation in glancing angle deposition on resistive switching property of WO3 thin films for RRAM devices
S Lamichhane, S Sharma, M Tomar… - Journal of Applied …, 2022 - pubs.aip.org
In this paper, nanostructured tungsten oxide (WO 3) thin films are deposited using the RF-
magnetron sputtering technique in Glancing Angle (GLAD) arrangement. Variation in the …
magnetron sputtering technique in Glancing Angle (GLAD) arrangement. Variation in the …
Resistive switching memory characteristics of single MoSe2 nanorods
Y Yan, B Sun, D Ma - Chemical Physics Letters, 2015 - Elsevier
Resistive switching memory effect in metal–oxide–metal structures is a fascinating
phenomenon toward next generation universal nonvolatile memories. Herein, the MoSe 2 …
phenomenon toward next generation universal nonvolatile memories. Herein, the MoSe 2 …
Preparation of MoSe2 nano-islands array embedded in a TiO2 matrix for photo-regulated resistive switching memory
P Han, B Sun, S Cheng, F Yu, B Jiao, Q Wu - Journal of Alloys and …, 2016 - Elsevier
The electrically driven resistance change of a material, called memristive switching, is a
fascinating phenomenon in the development of next generation nonvolatile memory …
fascinating phenomenon in the development of next generation nonvolatile memory …
High-performance InGaZnO-based reRAMs
P Ma, G Liang, Y Wang, Y Li, Q Xin… - IEEE Transactions on …, 2019 - ieeexplore.ieee.org
Amorphous indium-gallium-zinc oxide (IGZO) is one of the most promising oxide
semiconductors for thin-film transistors and it has started to replace amorphous silicon in …
semiconductors for thin-film transistors and it has started to replace amorphous silicon in …
Asymmetric resistive switching by anion out-diffusion mechanism in transparent Al/ZnO/ITO heterostructure for memristor applications
In this report, the monovalent cations of sodium and potassium are doped into the ZnO
matrix to explore for resistive switching. The structural analysis confirms that Na+ and K+ …
matrix to explore for resistive switching. The structural analysis confirms that Na+ and K+ …