[HTML][HTML] Recent progress in optoelectronic memristors for neuromorphic and in-memory computation

ME Pereira, R Martins, E Fortunato… - Neuromorphic …, 2023 - iopscience.iop.org
Neuromorphic computing has been gaining momentum for the past decades and has been
appointed as the replacer of the outworn technology in conventional computing systems …

Light-gated memristor with integrated logic and memory functions

H Tan, G Liu, H Yang, X Yi, L Pan, J Shang, S Long… - ACS …, 2017 - ACS Publications
Memristive devices are able to store and process information, which offers several key
advantages over the transistor-based architectures. However, most of the two-terminal …

Tailoring the electrical homogeneity, large memory window, and multilevel switching properties of HfO2-based memory through interface engineering

M Ismail, C Mahata, S Kim - Applied Surface Science, 2022 - Elsevier
Two-terminal resistive switching (RS) memories have attracted considerable interest for use
in storage class memory and in-memory computing applications. However, resistive random …

Neurosynaptic-like behavior of Ce-doped BaTiO3 ferroelectric thin film diodes for visual recognition applications

F Ye, XG Tang, JY Chen, WM Zhong, L Zhang… - Applied Physics …, 2022 - pubs.aip.org
Brain-like neuromorphic computing networks based on the human brain information
processing model are gradually breaking down the memory barriers caused by traditional …

[HTML][HTML] Grain boundary passivation via balancing feedback of hole barrier modulation in HfO2-x for nanoscale flexible electronics

YS Kim, H Chung, S Kwon, J Kim, W Jo - Nano Convergence, 2022 - Springer
Flexible electronics has attracted considerable attention owing to its enormous potential for
practical applications in various fields. However, the massive strain produced during …

Effect of variation in glancing angle deposition on resistive switching property of WO3 thin films for RRAM devices

S Lamichhane, S Sharma, M Tomar… - Journal of Applied …, 2022 - pubs.aip.org
In this paper, nanostructured tungsten oxide (WO 3) thin films are deposited using the RF-
magnetron sputtering technique in Glancing Angle (GLAD) arrangement. Variation in the …

Resistive switching memory characteristics of single MoSe2 nanorods

Y Yan, B Sun, D Ma - Chemical Physics Letters, 2015 - Elsevier
Resistive switching memory effect in metal–oxide–metal structures is a fascinating
phenomenon toward next generation universal nonvolatile memories. Herein, the MoSe 2 …

Preparation of MoSe2 nano-islands array embedded in a TiO2 matrix for photo-regulated resistive switching memory

P Han, B Sun, S Cheng, F Yu, B Jiao, Q Wu - Journal of Alloys and …, 2016 - Elsevier
The electrically driven resistance change of a material, called memristive switching, is a
fascinating phenomenon in the development of next generation nonvolatile memory …

High-performance InGaZnO-based reRAMs

P Ma, G Liang, Y Wang, Y Li, Q Xin… - IEEE Transactions on …, 2019 - ieeexplore.ieee.org
Amorphous indium-gallium-zinc oxide (IGZO) is one of the most promising oxide
semiconductors for thin-film transistors and it has started to replace amorphous silicon in …

Asymmetric resistive switching by anion out-diffusion mechanism in transparent Al/ZnO/ITO heterostructure for memristor applications

S Gora, L Thyda, G Dasi, R Muniramaiah, A Thakre… - Surfaces and …, 2022 - Elsevier
In this report, the monovalent cations of sodium and potassium are doped into the ZnO
matrix to explore for resistive switching. The structural analysis confirms that Na+ and K+ …