Ionizing radiation damage effects on GaN devices
Gallium Nitride based high electron mobility transistors (HEMTs) are attractive for use in high
power and high frequency applications, with higher breakdown voltages and two …
power and high frequency applications, with higher breakdown voltages and two …
Radiation damage in wide and ultra-wide bandgap semiconductors
The wide bandgap semiconductors SiC and GaN are already commercialized as power
devices that are used in the automotive, wireless, and industrial power markets, but their …
devices that are used in the automotive, wireless, and industrial power markets, but their …
Radiation damage in GaN/AlGaN and SiC electronic and photonic devices
The wide bandgap semiconductors SiC and GaN are commercialized for power electronics
and for visible to UV light-emitting diodes in the case of the GaN/InGaN/AlGaN materials …
and for visible to UV light-emitting diodes in the case of the GaN/InGaN/AlGaN materials …
Radiation damage in the ultra-wide bandgap semiconductor Ga2O3
We present a review of the published experimental and simulation radiation damage results
in Ga 2 O 3. All of the polytypes of Ga 2 O 3 are expected to show similar radiation …
in Ga 2 O 3. All of the polytypes of Ga 2 O 3 are expected to show similar radiation …
Effect of γ-ray irradiation on Schottky and ohmic contacts on AlGaN/GaN hetero-structures
The effect of γ-ray irradiation on the electrical transport characteristics of ohmic contacts and
Schottky contacts having different dimensions on AlGaN/GaN hetero-structures has been …
Schottky contacts having different dimensions on AlGaN/GaN hetero-structures has been …
Simulation study of single-event burnout in hardened GaN MISFET
XX Fei, Y Wang, B Sun, J Xing, W Wei, CY Li - Radiation Physics and …, 2023 - Elsevier
This paper presents simulation results of a single event burnout (SEB), for a hardened GaN
metal-insulator-semiconductor field-effect transistor (MISFET), employing a dual channel p …
metal-insulator-semiconductor field-effect transistor (MISFET), employing a dual channel p …
Simulation of radiation effects in AlGaN/GaN HEMTs
EE Patrick, M Choudhury, F Ren… - ECS Journal of Solid …, 2015 - iopscience.iop.org
AlGaN/GaN high electron mobility transistors (HEMTs) are desirable for space applications
because of their relative radiation hardness. Predictive modeling of these devices is …
because of their relative radiation hardness. Predictive modeling of these devices is …
Modeling proton irradiation in AlGaN/GaN HEMTs: Understanding the increase of critical voltage
A combination of TRIM and FLOODS models the effect of radiation damage on AlGaN/GaN
HEMTs. While excellent fits are obtained for threshold voltage shift, the models do not fully …
HEMTs. While excellent fits are obtained for threshold voltage shift, the models do not fully …
Effects of Gd2O3 Gate Dielectric on Proton-Irradiated AlGaN/GaN HEMTs
AlGaN/GaN high electron mobility transistors (HEMTs) and MOS-HEMTs using Gd 2 O 3 as
gate dielectric were irradiated with 2-MeV protons up to fluence of 1× 10 15 cm-2. Results …
gate dielectric were irradiated with 2-MeV protons up to fluence of 1× 10 15 cm-2. Results …
Effect of low dose γ-irradiation on DC performance of circular AlGaN/GaN high electron mobility transistors
The changes in direct current performance of circular-shaped AlGaN/GaN high electron
mobility transistors (HEMTs) after 60 Co γ-irradiation doses of 50, 300, 450, or 700 Gy were …
mobility transistors (HEMTs) after 60 Co γ-irradiation doses of 50, 300, 450, or 700 Gy were …