Ferroelectric materials have been intensively investigated for high‐performance nonvolatile
memory devices in the past decades, owing to their nonvolatile polarization characteristics …

HfO2‐based ferroelectric materials are promising candidates for next‐generation nonvolatile
memories. Since the first report on Si‐doped HfO2 ferroelectric thin film in 2011, it has been …

Ferroelectric hafnium and zirconium oxides have undergone rapid scientific development
over the last decade, pushing them to the forefront of ultralow-power electronic systems …

Ten years after the first report on ferroelectricity in HfO2, researchers are still occupied
unraveling the different causes behind this phenomenon. Among them, oxygen related …

About ten years after ferroelectricity was first reported in doped HfO2 polycrystalline films,
there is tremendous interest in this material and ferroelectric oxides are once again in the …

Hafnia‐based compounds have considerable potential for use in nanoelectronics due to
their compatibility with complementary metal–oxide–semiconductor devices and robust …

In ferroelectric materials, spontaneous symmetry breaking leads to a switchable electric
polarization, which offers significant promise for nonvolatile memories. In particular …

The presence of the top electrode on hafnium oxide‐based thin films during processing has
been shown to drive an increase in the amount of metastable ferroelectric orthorhombic …

The discovery of ferroelectricity in polycrystalline thin films of doped HfO2 has reignited the
expectations of developing competitive ferroelectric non-volatile memory devices. To date, it …

Although some years have passed since the discovery of the ferroelectric phase in HfO2 and
ZrO2 and their solid solution system Hf x Zr1–x O2, the details of the emergence of this …