NS3K: A 3-nm nanosheet FET standard cell library development and its impact
T Kim, J Jeong, S Woo, J Yang, H Kim… - … Transactions on Very …, 2022 - ieeexplore.ieee.org
Nanosheet FETs (NSFETs) are attracting attention as promising devices that can replace
FinFETs beyond the 5-nm node. Despite the importance of the devices, few studies analyze …
FinFETs beyond the 5-nm node. Despite the importance of the devices, few studies analyze …
Strain induced variability study in Gate-All-Around vertically-stacked horizontal nanosheet transistors
Using physics-based predictive technology CAD simulations, we show the improvements
possible in device performance via strain engineering in vertically-stacked horizontal gate …
possible in device performance via strain engineering in vertically-stacked horizontal gate …
Interface traps in the sub-3 nm technology node: A comprehensive analysis and benchmarking of negative capacitance FinFET and nanosheet FETs-A reliability …
Interface traps play a significant role in shaping the performance and reliability of
semiconductor devices, particularly in advanced technologies such as Negative …
semiconductor devices, particularly in advanced technologies such as Negative …
Design and optimization of stress/strain in GAA nanosheet FETs for improved FOMs at sub-7 nm nodes
Stress/strain engineering techniques are employed to boost the performance of Gate-all-
around (GAA) vertically stacked nanosheet field-effect transistors (NSFETs) for 7 nm …
around (GAA) vertically stacked nanosheet field-effect transistors (NSFETs) for 7 nm …
Impact of process variability on threshold voltage in vertically-stacked nanosheet TFET
H Yuehui, H Ru, G Yuefeng, F Liangyou - Silicon, 2023 - Springer
Abstract Vertically Stacked Nanosheet TFET (VNS-TFET) can break the subthreshold swing
limit of MOSFETs and achieve higher layout efficiency. Due to the scaled-down device size …
limit of MOSFETs and achieve higher layout efficiency. Due to the scaled-down device size …
Performance of junctionless and inversion-mode thin-film transistors with stacked nanosheet channels
YR Lin, YH Lin, YF Chen, YT Hsu… - IEEE Transactions …, 2019 - ieeexplore.ieee.org
This article comprehensively investigated a junctionless thin-film transistor (JL TFT) with
stacked nanosheet (NS) channels. Through experiments, we 1) compared a JL TFT with a …
stacked nanosheet (NS) channels. Through experiments, we 1) compared a JL TFT with a …
Design of a 30 Nm Novel 3-D Quad Gate Stacked Nano-Sheets FinFET
Abstract Fin Field Effect Transistors (FinFETs) have appeared as a replacement for devices
like Metal Oxide Semiconductor Field Effect Transistor (MOSFET) at low power operations …
like Metal Oxide Semiconductor Field Effect Transistor (MOSFET) at low power operations …
Comparative analysis of capacitorless DRAM performance according to stacked junctionless gate-all-around structures
J Hwang, I Yun - Solid-State Electronics, 2024 - Elsevier
The characteristic comparison of the capacitor-less DRAMs in the structural form variation is
investigated. Based on the simulation results of the three basic structures, such as circular …
investigated. Based on the simulation results of the three basic structures, such as circular …
Performance Analysis of Sub-10nm Vertically Stacked Gate-All-Around FETs
Gate-All-Around Nanosheet Field Effect Transistor (GAA-NSFETs) have emerged as the
solution to avoid short channel effects (SCEs) at the 10-nm technology node and beyond. In …
solution to avoid short channel effects (SCEs) at the 10-nm technology node and beyond. In …
Performance Analysis of Vertically Stacked Nanosheet Tunnel Field Effect Transistor with Ideal Subthreshold Swing
In this paper, a novel vertically stacked silicon Nanosheet Tunnel Field Effect Transistor (NS-
TFET) device scaled to a gate length of 12 nm with Contact poly pitch (CPP) of 48 nm is …
TFET) device scaled to a gate length of 12 nm with Contact poly pitch (CPP) of 48 nm is …