In this paper, we have developed an analytical model of double gate MOSFET using Green's
function approach in the subthreshold regime of operation. The exact analytical solution to 2 …

In this paper, a scheme of the germanene nanoribbon tunneling field effect transistor (GeNR-
TFET) is proposed. The characteristics and analog performance of the device were …

This paper presents an efficient method to improve the heating effects in Nanoscale SOI
MOSFET with the Vertical Gaussian Doping Profile in Drain and Source regions (DSG-SOI) …

A fractional-order equivalent model for characterizing the interelectrode capacitance of
MOSFETs | Emerald Insight Books and journals Case studies Expert Briefings Open Access …

In order to improve the drive current and subthreshold swing (SS), a novel vertical-dual-
source tunneling field-effect transistor (VDSTFET) device is proposed in this paper. The …

This paper presents the impact of strain on the electrical characteristic such as drain current,
threshold voltage, and subthreshold swing (SS) of double-gate tunnel FETs (DG TFETs) with …

In this paper, the subthreshold behavior of ion-implanted strained-Si double-material double-
gate (DMDG) MOSFETs has been analyzed by means of subthreshold current and …

In this work, an attempt has been made to investigate the performance of a new device,
Wavy Junctionless FinFET at 22 nm node using low to high permittivity spacer for underlap …

In this simulation based study, we report a tunnel field effect transistor on SOI substrates with
phosphorene as source material to enhance the scaling of Si CMOS technology. The …

Purpose This paper aims to present the estimation of the output voltage of metal oxide
semiconductor field effect transistor (MOSFET) using the extended Kalman filter (EKF) …