Analysis of quenching conditions of Fabry-Perot mode lasing in semiconductor stripe-contact lasers

SO Slipchenko, AA Podoskin, DA Vinokurov… - Semiconductors, 2011 - Springer
Radiative characteristics of semiconductor stripe-contact lasers operating under quenching
conditions of Fabry-Perot-mode lasing are studied. It is found that reversible turning off of …

Analysis of threshold conditions for generation of a closed mode in a Fabry-Perot semiconductor laser

SO Slipchenko, AA Podoskin, NA Pikhtin, ZN Sokolova… - Semiconductors, 2011 - Springer
Threshold conditions for generation of a closed mode in the crystal of the Fabry-Perot
semiconductor laser with a quantum-well active region are analyzed. It is found that main …

Analysis of the emission efficiency of powerful semiconductor lasers under closed-mode threshold lasing conditions

SO Slipchenko, AA Podoskin, IS Shashkin… - Semiconductors, 2014 - Springer
A new model describing the decrease in the emission efficiency and optical output power of
a semiconductor laser above the lasing threshold of the Fabry-Perot mode is suggested. The …

Transformation of laser light by a semiconductor microcylinder

LG Astafyeva, GP Ledneva - Optics and Spectroscopy, 2013 - Springer
Theoretical simulation of the transformation of the electromagnetic field by microcavities in
the shape of homogeneous semiconductor microcylinders has shown that the morphology of …