Organic solvent-free water-developable sugar resist material derived from biomass in green lithography

S Takei, A Oshima, T Ichikawa, A Sekiguchi… - Microelectronic …, 2014 - Elsevier
We have demonstrated an organic solvent-free water-developable branched sugar resist
material derived from biomass for its use in green electron beam lithography. This …

[HTML][HTML] Inedible cellulose-based biomass resist material amenable to water-based processing for use in electron beam lithography

S Takei, H Maki, K Sugahara, K Ito, M Hanabata - AIP Advances, 2015 - pubs.aip.org
An electron beam (EB) lithography method using inedible cellulose-based resist material
derived from woody biomass has been successfully developed. This method allows the use …

Study of high etch rate bottom antireflective coating and gap fill materials using dextrin derivatives in ArF lithography

S Takei, T Shinjo, Y Sakaida - Japanese Journal of Applied …, 2007 - iopscience.iop.org
In the present paper, we describe a novel class of bottom antireflective coating (BARC) and
gap fill materials using dextrin with a-glycoside bonds in a polysaccharide. ArF resist …

Step and flash nano imprint lithography of 80 nm dense line pattern using trehalose derivative resist material

S Takei - Applied physics express, 2010 - iopscience.iop.org
High resolution trehalose derivative resist which had specific desired properties was
successfully developed for step and flash nano imprint lithography as one of advanced …

Nanoparticle free polymer blends for light scattering films in liquid crystal displays

S Takei, K Mochiduki, N Kubo, Y Yokoyama - Applied Physics Letters, 2012 - pubs.aip.org
This paper reports an approach using nanoparticle free polymer blends for light scattering
films in liquid crystal displays. The ability to create the regularly structured circle of …

Gap fill materials using cyclodextrin derivatives in ArF lithography

S Takei, T Shinjo, Y Sakaida… - Japanese Journal of …, 2007 - iopscience.iop.org
High planarizing gap fill materials based on β-cyclodextrin in ArF photoresist under-layer
materials have been developed for fast etching in CF 4 gas. Gap fill materials used in the via …

Diffusion processes of single fluorescent molecules in a polymer-based thin material with three-dimensional network

S Ito, T Kusumi, S Takei, H Miyasaka - Chemical Communications, 2009 - pubs.rsc.org
Single-molecule imaging revealed the hierarchical mobility change of guest dyes in a
polymer-based thin film under network formation: at the early stage of the reaction, only the …

Resist poisoning studies of gap fill materials for patterning metal trenches in via-first dual damascene process

S Takei - Japanese journal of applied physics, 2008 - iopscience.iop.org
The via-first dual damascene process is the current manufacturing technology for copper/low-
k interconnect fabrication. In the conventional via-first dual damascene process, metal trench …

The effects of the bottom anti-reflective coating with different baked temperatures and thicknesses on nanoscale patterns

J Zheng, L Li, W Chen - Applied Surface Science, 2015 - Elsevier
The bottom anti-reflective coating (BARC) material can enhance the resolution of the
nanopatterns structures in laser interference lithography process. In this study, WIDE-B ARC …

Characterization of gap fill materials for planarizing substrate in via-first dual damascene lithography process

S Takei, Y Sakaida, T Shinjo - Japanese Journal of Applied …, 2007 - iopscience.iop.org
This study focuses on the characterization of gap fill materials for advanced ArF lithography
process. The gap fill materials have the planarization property on an irregular substrate such …