Effect of gradual ordering of Ge/Sb atoms on chemical bonding: A proposed mechanism for the formation of crystalline Ge2Sb2Te5
J Singh, G Singh, A Kaura, SK Tripathi - Journal of Solid State Chemistry, 2018 - Elsevier
Using first principle calculations, we study the atomic arrangement and bonding mechanism
in the crystalline phase of Ge 2 Sb 2 Te 5 (GST). It is found that the stability of GST depends …
in the crystalline phase of Ge 2 Sb 2 Te 5 (GST). It is found that the stability of GST depends …
Simultaneous Seebeck coefficient and electrical conductivity enhancement of GeSbTe films via Sn addition
P Khwansungnoen, N Daichakomphu, P Sukwisute… - Ceramics …, 2022 - Elsevier
Sn-added GeSbTe (GST) thin films were deposited using a co-magnetron sputtering
technique. The effects of varying the Sn content through a variable Sn target sputtering …
technique. The effects of varying the Sn content through a variable Sn target sputtering …
Electronic and Thermoelectric Properties of Layered Sn- and Pb-Doped Ge2Sb2Te5 Alloys Using First Principle Calculations
J Singh, G Singh, A Kaura, SK Tripathi - Journal of Electronic Materials, 2016 - Springer
A computational study on stable hexagonal phase of undoped, and Sn-and Pb-doped Ge 2
Sb 2 Te 5 (GST) phase change materials has been carried out. The electronic structure …
Sb 2 Te 5 (GST) phase change materials has been carried out. The electronic structure …
Study of the structure and chemical bonding of crystalline Ge4Sb2Te7 using first principle calculations
The atomic arrangements and chemical bonding of stable Ge4Sb2Te7 (GeTe rich), a phase-
change material, have been investigated by means of ab initio total energy calculations. To …
change material, have been investigated by means of ab initio total energy calculations. To …