Fast and accurate proximity effect correction algorithm based on pattern edge shape adjustment for electron beam lithography
W Yao, H Xu, H Zhao, M Tao, J Liu - Microelectronics Journal, 2023 - Elsevier
This paper proposes a fast and accurate shape-based proximity effect correction (PEC)
algorithm based on pattern edge shape adjustment (PESA) for electron beam lithography …
algorithm based on pattern edge shape adjustment (PESA) for electron beam lithography …
Impacts of point spread function accuracy on patterning prediction and proximity effect correction in low-voltage electron-beam–direct-write lithography
CH Liu, PCW Ng, YT Shen, SW Chien… - Journal of Vacuum …, 2013 - pubs.aip.org
Electron-beam–direct-write lithography at lower accelerating voltages has been considered
as a candidate for next-generation lithography. Although long-range proximity effects are …
as a candidate for next-generation lithography. Although long-range proximity effects are …
Geometry-based Curvilinear Mask Process Correction for Enhanced Pattern Fidelity, Contrast, and Manufacturability
CH Liu, ZA Din - IEEE Transactions on Semiconductor …, 2024 - ieeexplore.ieee.org
Curvilinear (CL) mask patterns, essential for extreme ultraviolet lithography in advanced
semiconductor manufacturing, suffer from degraded fidelity and contrast due to complex …
semiconductor manufacturing, suffer from degraded fidelity and contrast due to complex …
New parametric point spread function calibration methodology for improving the accuracy of patterning prediction in electron-beam lithography
CH Liu, HT Ng, KY Tsai - Journal of Micro/Nanolithography …, 2012 - spiedigitallibrary.org
Electron-beam-direct-write lithography has been considered a candidate next-generation
technique for achieving high resolution. An accurate point spread function (PSF) is essential …
technique for achieving high resolution. An accurate point spread function (PSF) is essential …
Shape-based proximity effect correction method for throughput, fidelity, and contrast enhancement of electron-beam writer
CH Liu, ZA Ding, SP Wang - Applied Physics Express, 2023 - iopscience.iop.org
Conventional shape-based proximity effect correction (PEC) methods can only improve
pattern fidelity and present a risk to correction effectiveness under severe resist-contour …
pattern fidelity and present a risk to correction effectiveness under severe resist-contour …
Accurate and Efficient Proximity Effect Correction for Electron Beam Lithography Based on Multilayer Perceptron Neural Network
W Yao, Y Yang, J Liu, H Xu, S Zhang… - 2022 International …, 2022 - ieeexplore.ieee.org
This paper proposes a proximity effect correction (PEC) method for electron beam
lithography (EBL) using multilayer perceptron (MLP) neural network (NN). By leveraging the …
lithography (EBL) using multilayer perceptron (MLP) neural network (NN). By leveraging the …
New method of optimizing writing parameters in electron beam lithography systems for throughput improvement considering patterning fidelity constraints
HT Ng, YT Shen, SY Chen, CH Liu… - Journal of Micro …, 2012 - spiedigitallibrary.org
Low-energy electron beam lithography is one of the promising next-generation lithography
technology solutions for the 21-nm half-pitch node and beyond because of fewer proximity …
technology solutions for the 21-nm half-pitch node and beyond because of fewer proximity …
TransUNet-based end-to-end proximity effect correction for electron beam lithography
H Huang, H Wang, Y Liu, S Li - Eighth International Workshop …, 2024 - spiedigitallibrary.org
Electron Beam Lithography (EBL) has advantages in high resolution imaging. However, its
resolution was limited by the proximity effect due to electron backscattering in solid …
resolution was limited by the proximity effect due to electron backscattering in solid …
Accurate and Efficient Proximity Effect Correction for Electron Beam Lithography Based on Distributed Parallel Computing
H Zhao, W Yao, H Xu, S Zhang, Y Yang… - 2022 International …, 2022 - ieeexplore.ieee.org
This paper proposes an efficient proximity effect correction (PEC) method for electron beam
lithography (EBL) based on distributed parallel computing. To facilitate PEC calculations of …
lithography (EBL) based on distributed parallel computing. To facilitate PEC calculations of …
Electron-beam proximity effect model calibration for fabricating scatterometry calibration samples
YT Shen, CH Liu, CY Chen, HT Ng… - … Process Control for …, 2012 - spiedigitallibrary.org
Scatterometry has been proven to be effective in critical dimension (CD) and sidewall angle
(SWA) measurements with good precision and accuracy. In order to study the effectiveness …
(SWA) measurements with good precision and accuracy. In order to study the effectiveness …