Recent advances in transistor‐based artificial synapses

S Dai, Y Zhao, Y Wang, J Zhang, L Fang… - Advanced Functional …, 2019 - Wiley Online Library
Simulating biological synapses with electronic devices is a re‐emerging field of research. It
is widely recognized as the first step in hardware building brain‐like computers and artificial …

Nanowire electronics: from nanoscale to macroscale

C Jia, Z Lin, Y Huang, X Duan - Chemical reviews, 2019 - ACS Publications
Semiconductor nanowires have attracted extensive interest as one of the best-defined
classes of nanoscale building blocks for the bottom-up assembly of functional electronic and …

MoS2 transistors with 1-nanometer gate lengths

SB Desai, SR Madhvapathy, AB Sachid, JP Llinas… - Science, 2016 - science.org
Scaling of silicon (Si) transistors is predicted to fail below 5-nanometer (nm) gate lengths
because of severe short channel effects. As an alternative to Si, certain layered …

Rise of silicene: A competitive 2D material

J Zhao, H Liu, Z Yu, R Quhe, S Zhou, Y Wang… - Progress in Materials …, 2016 - Elsevier
Silicene, a silicon analogue of graphene, has attracted increasing attention during the past
few years. As early as in 1994, the possibility of stage corrugation in the Si analogs of …

Nano-bioelectronics

A Zhang, CM Lieber - Chemical reviews, 2016 - ACS Publications
Nano-bioelectronics represents a rapidly expanding interdisciplinary field that combines
nanomaterials with biology and electronics and, in so doing, offers the potential to overcome …

MoS2 Field-Effect Transistor with Sub-10 nm Channel Length

A Nourbakhsh, A Zubair, RN Sajjad, A Tavakkoli KG… - Nano …, 2016 - ACS Publications
Atomically thin molybdenum disulfide (MoS2) is an ideal semiconductor material for field-
effect transistors (FETs) with sub-10 nm channel lengths. The high effective mass and large …

Two-dimensional materials and their prospects in transistor electronics

F Schwierz, J Pezoldt, R Granzner - Nanoscale, 2015 - pubs.rsc.org
During the past decade, two-dimensional materials have attracted incredible interest from
the electronic device community. The first two-dimensional material studied in detail was …

Multigate transistors as the future of classical metal–oxide–semiconductor field-effect transistors

I Ferain, CA Colinge, JP Colinge - Nature, 2011 - nature.com
For more than four decades, transistors have been shrinking exponentially in size, and
therefore the number of transistors in a single microelectronic chip has been increasing …

One-dimension-based spatially ordered architectures for solar energy conversion

S Liu, ZR Tang, Y Sun, JC Colmenares… - Chemical Society …, 2015 - pubs.rsc.org
The severe consequences of fossil fuel consumption have resulted in a need for alternative
sustainable sources of energy. Conversion and storage of solar energy via a renewable …

Junctionless nanowire transistor (JNT): Properties and design guidelines

JP Colinge, A Kranti, R Yan, CW Lee, I Ferain, R Yu… - Solid-State …, 2011 - Elsevier
Junctionless transistors are variable resistors controlled by a gate electrode. The silicon
channel is a heavily doped nanowire that can be fully depleted to turn the device off. The …