In this review, the structural, mechanical, thermal, and chemical properties of substrates
used for gallium nitride (GaN) epitaxy are compiled, and the properties of GaN films …

We review recent progress in the group-III nitride and related materials, and electronic and
optical devices based on them. Blue and UV (eg ultra violet) emitters and detectors, and …

In this letter we demonstrate that the anomalously low (002) x‐ray rocking curve widths for
epitaxial hexagonal GaN films on (001) sapphire are a result of a specific threading …

Pulsed laser deposition (PLD) technique is used to deposit pure and Al-doped ZnO thin films
at different temperatures on glass substrates. From the transmission data from optical …

Cracking of GaN on Si usually occurs due to the large thermal mismatch of GaN and Si
when layer thicknesses exceed approximately 1 μm in metalorganic chemical vapor …

The structural evolution of epitaxial GaN layers grown on basal plane sapphire has been
studied by atomic force microscopy (AFM), x‐ray diffraction, and transmission electron …

The AlGaInN quaternary alloy system is uniquely suited for numerous device applications
because the bandgap can be varied from 1.9 to 6.2 eV by changing the alloy composition …

An overview of III-Nitride based laser diodes (LDs) is presented focusing on the materials
challenges in each phase of device development. We discuss early breakthroughs leading …

The growth of high-quality III-nitrides by plasma-assisted molecular beam epitaxy on Si
(111) substrates is addressed. A combination of optimized AlN buffer layers and a two-step …

Applicability of GaN in unipolar and bipolar devices for high-power electronic applications is
evaluated with respect to similar devices based on other materials. Specific resistance is …