[HTML][HTML] Selecting alternative metals for advanced interconnects
JP Soulié, K Sankaran, B Van Troeye… - Journal of Applied …, 2024 - pubs.aip.org
Interconnect resistance and reliability have emerged as critical factors limiting the
performance of advanced CMOS circuits. With the slowdown of transistor scaling …
performance of advanced CMOS circuits. With the slowdown of transistor scaling …
Demonstration of CMOS-compatible multi-level graphene interconnects with metal vias
Doped-multilayer-graphene (DMLG) interconnects employing the subtractive-etching (SE)
process have opened a new pathway for designing interconnects at advanced technology …
process have opened a new pathway for designing interconnects at advanced technology …
Study on the Circuit Performance of Various Interconnect Metal Materials in the Latest Process Nodes
M Choi, J Park, S Choi, K Kwon, Y Lee… - Journal of …, 2023 - dbpia.co.kr
In this work, circuit-level benchmarks were performed on Copper (Cu), Tungsten (W), Cobalt
(Co), Ruthenium (Ru), and Doped-multilayer-graphene (DMLG), which are various metallic …
(Co), Ruthenium (Ru), and Doped-multilayer-graphene (DMLG), which are various metallic …