Combinatorial synthesis of magnesium tin nitride semiconductors

AL Greenaway, AL Loutris… - Journal of the …, 2020 - ACS Publications
Nitride materials feature strong chemical bonding character that leads to unique crystal
structures, but many ternary nitride chemical spaces remain experimentally unexplored. The …

[HTML][HTML] Deep level defects and cation sublattice disorder in ZnGeN2

MS Haseman, MR Karim, D Ramdin… - Journal of Applied …, 2020 - pubs.aip.org
III-nitrides have revolutionized lighting technology and power electronics. Expanding the
nitride semiconductor family to include heterovalent ternary nitrides opens up new and …

Polaronic enhancement of second-harmonic generation in lithium niobate

AL Kozub, A Schindlmayr, U Gerstmann, WG Schmidt - Physical Review B, 2021 - APS
Density-functional theory within a Berry-phase formulation of the dynamical polarization is
used to determine the second-order susceptibility χ (2) of lithium niobate (LiNbO 3). Defect …

[图书][B] First-principles study of II-IV-N2 compounds

S Lyu - 2019 - search.proquest.com
Abstract The II-IV-N 2 semiconductors can be conceptually derived from the group-III nitrides
and are useful to complement the nitride semiconductor family. The Cd-IV-N 2 and Be-IV-N 2 …

Applications of Many-body Perturbation Theory to Semiconductors and Their Defects

O Dernek - 2024 - rave.ohiolink.edu
Figure 1.1: The impact of GNoME in exploration of new materials is illustrated. This figure is
adapted from Ref.[3]. Understanding the fundamental properties of these materials is a …

Identification and Control of Native Point Defects in Wide Bandgap Semiconducting ZnGeN2, ScN, ZnO, and Ga2O3

MS Haseman - 2023 - search.proquest.com
Wide bandgap semiconductors (WBGS) are an exceptionally important class of materials for
next-generation microelectronics that exhibit a diverse set of physical phenomena spanning …