Attojoule optoelectronics for low-energy information processing and communications

DAB Miller - Journal of Lightwave Technology, 2017 - ieeexplore.ieee.org
Optics offers unique opportunities for reducing energy in information processing and
communications while simultaneously resolving the problem of interconnect bandwidth …

Novel light source integration approaches for silicon photonics

Z Wang, A Abbasi, U Dave, A De Groote… - Laser & Photonics …, 2017 - Wiley Online Library
Silicon does not emit light efficiently, therefore the integration of other light‐emitting
materials is highly demanded for silicon photonic integrated circuits. A number of integration …

Monolithically integrated high-β nanowire lasers on silicon

B Mayer, L Janker, B Loitsch, J Treu, T Kostenbader… - Nano …, 2016 - ACS Publications
Reliable technologies for the monolithic integration of lasers onto silicon represent the holy
grail for chip-level optical interconnects. In this context, nanowires (NWs) fabricated using III …

Doping-enhanced radiative efficiency enables lasing in unpassivated GaAs nanowires

T Burgess, D Saxena, S Mokkapati, Z Li, CR Hall… - Nature …, 2016 - nature.com
Nanolasers hold promise for applications including integrated photonics, on-chip optical
interconnects and optical sensing. Key to the realization of current cavity designs is the use …

GaAs–AlGaAs core–shell nanowire lasers on silicon: invited review

G Koblmüller, B Mayer, T Stettner… - Semiconductor …, 2017 - iopscience.iop.org
Semiconductor nanowire (NW) lasers provide significant potential to create a new
generation of lasers and on-chip coherent light sources by virtue of their ability to operate as …

Ultralow surface recombination velocity in passivated InGaAs/InP nanopillars

A Higuera-Rodriguez, B Romeira, S Birindelli… - Nano …, 2017 - ACS Publications
The III–V semiconductor InGaAs is a key material for photonics because it provides optical
emission and absorption in the 1.55 μm telecommunication wavelength window. However …

Monolithically integrated InGaAs nanowires on 3D structured silicon-on-insulator as a new platform for full optical links

H Kim, AC Farrell, P Senanayake, WJ Lee… - Nano …, 2016 - ACS Publications
Monolithically integrated III–V semiconductors on a silicon-on-insulator (SOI) platform can
be used as a building block for energy-efficient on-chip optical links. Epitaxial growth of III–V …

Direct measurements of Fermi level pinning at the surface of intrinsically n-type InGaAs nanowires

M Speckbacher, J Treu, TJ Whittles, WM Linhart… - Nano …, 2016 - ACS Publications
Surface effects strongly dominate the intrinsic properties of semiconductor nanowires (NWs),
an observation that is commonly attributed to the presence of surface states and their …

Lateral and vertical heterostructures in two-dimensional transition-metal dichalcogenides

H Taghinejad, AA Eftekhar, A Adibi - Optical Materials Express, 2019 - opg.optica.org
Heterostructures (HSs) of two-dimensional (2D) transition-metal dichalcogenides (TMDs)
offer a plethora of opportunities in materials science, condensed-matter physics, and device …

Lattice-matched InGaAs–InAlAs core–shell nanowires with improved luminescence and photoresponse properties

J Treu, T Stettner, M Watzinger, S Morkötter… - Nano …, 2015 - ACS Publications
Core–shell nanowires (NW) have become very prominent systems for band engineered NW
heterostructures that effectively suppress detrimental surface states and improve …