Attojoule optoelectronics for low-energy information processing and communications
DAB Miller - Journal of Lightwave Technology, 2017 - ieeexplore.ieee.org
Optics offers unique opportunities for reducing energy in information processing and
communications while simultaneously resolving the problem of interconnect bandwidth …
communications while simultaneously resolving the problem of interconnect bandwidth …
Novel light source integration approaches for silicon photonics
Silicon does not emit light efficiently, therefore the integration of other light‐emitting
materials is highly demanded for silicon photonic integrated circuits. A number of integration …
materials is highly demanded for silicon photonic integrated circuits. A number of integration …
Monolithically integrated high-β nanowire lasers on silicon
Reliable technologies for the monolithic integration of lasers onto silicon represent the holy
grail for chip-level optical interconnects. In this context, nanowires (NWs) fabricated using III …
grail for chip-level optical interconnects. In this context, nanowires (NWs) fabricated using III …
Doping-enhanced radiative efficiency enables lasing in unpassivated GaAs nanowires
Nanolasers hold promise for applications including integrated photonics, on-chip optical
interconnects and optical sensing. Key to the realization of current cavity designs is the use …
interconnects and optical sensing. Key to the realization of current cavity designs is the use …
GaAs–AlGaAs core–shell nanowire lasers on silicon: invited review
G Koblmüller, B Mayer, T Stettner… - Semiconductor …, 2017 - iopscience.iop.org
Semiconductor nanowire (NW) lasers provide significant potential to create a new
generation of lasers and on-chip coherent light sources by virtue of their ability to operate as …
generation of lasers and on-chip coherent light sources by virtue of their ability to operate as …
Ultralow surface recombination velocity in passivated InGaAs/InP nanopillars
A Higuera-Rodriguez, B Romeira, S Birindelli… - Nano …, 2017 - ACS Publications
The III–V semiconductor InGaAs is a key material for photonics because it provides optical
emission and absorption in the 1.55 μm telecommunication wavelength window. However …
emission and absorption in the 1.55 μm telecommunication wavelength window. However …
Monolithically integrated InGaAs nanowires on 3D structured silicon-on-insulator as a new platform for full optical links
Monolithically integrated III–V semiconductors on a silicon-on-insulator (SOI) platform can
be used as a building block for energy-efficient on-chip optical links. Epitaxial growth of III–V …
be used as a building block for energy-efficient on-chip optical links. Epitaxial growth of III–V …
Direct measurements of Fermi level pinning at the surface of intrinsically n-type InGaAs nanowires
Surface effects strongly dominate the intrinsic properties of semiconductor nanowires (NWs),
an observation that is commonly attributed to the presence of surface states and their …
an observation that is commonly attributed to the presence of surface states and their …
Lateral and vertical heterostructures in two-dimensional transition-metal dichalcogenides
Heterostructures (HSs) of two-dimensional (2D) transition-metal dichalcogenides (TMDs)
offer a plethora of opportunities in materials science, condensed-matter physics, and device …
offer a plethora of opportunities in materials science, condensed-matter physics, and device …
Lattice-matched InGaAs–InAlAs core–shell nanowires with improved luminescence and photoresponse properties
J Treu, T Stettner, M Watzinger, S Morkötter… - Nano …, 2015 - ACS Publications
Core–shell nanowires (NW) have become very prominent systems for band engineered NW
heterostructures that effectively suppress detrimental surface states and improve …
heterostructures that effectively suppress detrimental surface states and improve …