Numerical simulation of deep ultraviolet LED, micro-LED, and nano-LED with different emission wavelengths based on FDTD

J Jia, YD Ruan, Y Gu, Z Zhang, S Zhang, R Guo… - Optics …, 2024 - opg.optica.org
The current low external quantum efficiency (EQE) of deep ultraviolet (DUV) LEDs and micro-
LEDs is largely attributed to their low light extraction efficiency (LEE). To address this issue …

A Review of UV Communications for UAVs

X Li, X Xue, C Zhou, J Ma, P Su - IEEE Open Journal of the …, 2024 - ieeexplore.ieee.org
As an important branch of free-space optical (FSO) communication technology, ultraviolet
(UV) communication is mainly applied to mobile communication platforms represented by …

[HTML][HTML] A Comprehensive Review of Group-III Nitride Light-Emitting Diodes: From Millimeter to Micro-Nanometer Scales

X Fan, J Shi, Y Chen, G Miao, H Jiang, H Song - Micromachines, 2024 - mdpi.com
This review describes the development history of group-III nitride light-emitting diodes
(LEDs) for over 30 years, which has achieved brilliant achievements and changed people …

In-Situ Fabricated Transparent Flexible Nanowire Device with Wavelength-Regulated Dual-Function of Photodetector and Photonic Synapse

X Chen, W Mao, W Zhou, P Huang, H Liu… - … Applied Materials & …, 2024 - ACS Publications
Integrating the dual functionalities of a photodetector and photonic synapse into a single
device is challenging due to their conflicting requirements for photocurrent decay rates. This …

Amorphous Gallium Oxide-Based Crosstalk-Suppressing Solar-Blind Imaging Array Prepared by One-Step Method

H Zhang, R Zhu, Z Mei, F ChiChung· Ling… - The Journal of …, 2024 - ACS Publications
The solar-blind ultraviolet band presents a unique opportunity for low-background-noise
detection due to limited atmospheric light transmission. Especially, with the ability to obtain …

Design and simulation of a III-nitride light emitting transistor

M Awwad, SI Rahman, C Joishi… - …, 2024 - pubishingsupport.iopscience.iop.org
This paper describes the design and characteristics of monolithically integrated three-
terminal gated III-Nitride light emitting diodes (LEDs) devices. The impact of channel doping …

Quasi-passive modulation for monolithic GaN photoelectronic circuit

Z Ye, Y Su, H Zhang, W Wu, J Fu, J Piao, Y Wang - Optics Express, 2024 - opg.optica.org
Due to the overlap between the electroluminescence spectrum and spectral responsivity
curve, gallium nitride (GaN)-based multi-quantum well (MQW) diodes can modulate and …

High-Performance p-GaN/AlGaN/GaN HEMT-Based Ultraviolet Phototransistors With fW-Level Weak Light Detection Capacity

H Wang, H You, Y Wang, Y Wang… - IEEE Electron …, 2024 - ieeexplore.ieee.org
In this work, high-performance ultraviolet (UV) phototransistors (PTs) based on the p-
GaN/AlGaN/GaN HEMT structure were reported. An innovative strategy making a tradeoff …

High-brightness green CdSe/ZnS quantum dots stimulated by solar-blind deep-ultraviolet light in optical wireless communications

H Xiao, K Zhang, B Xu, H Shen, L Wang, C Sun - Optics Letters, 2024 - opg.optica.org
Ultraviolet-based optical wireless communication (OWC) is emerging as a significant
technology for the next-generation secure communication, particularly within the solar-blind …

Integrated Deep-Ultraviolet Micro-LED Array with Ultralow Contact Resistance and Ultrahigh Bandwidth for Intermixed Solar-Blind Optical Wireless Communication

R Wang, H Yu, MH Memon, Z Gao… - IEEE Electron …, 2024 - ieeexplore.ieee.org
In this work, we report an integrated deep-ultraviolet (DUV) micro-LED array consisting of
two distinct device sizes: one is 35× 35 μm 2 and the other is 100× 100 μm 2 (namely, 35-μm …