The metal–oxide–semiconductor field-effect transistor (MOSFET), a core element of
complementary metal–oxide–semiconductor (CMOS) technology, represents one of the …

Abstract Two-dimensional (2D) semiconductors have attracted tremendous interest as
atomically thin channels that could facilitate continued transistor scaling. However, despite …

Two-dimensional transition-metal dichalcogenides (TMDs) are of interest for beyond-silicon
electronics,. It has been suggested that bilayer TMDs, which combine good electrostatic …

Advanced beyond-silicon electronic technology requires both channel materials and also
ultralow-resistance contacts to be discovered,. Atomically thin two-dimensional …

Beyond-silicon technology demands ultrahigh performance field-effect transistors. Transition
metal dichalcogenides provide an ideal material platform, but the device performances such …

Here we benchmark device-to-device variation in field-effect transistors (FETs) based on
monolayer MoS2 and WS2 films grown using metal-organic chemical vapor deposition …

To continue to improve integrated circuit performance and functionality, scaled transistors
with short channel lengths and low thickness are needed. But further scaling of silicon …

Abstract Two-dimensional (2D) semiconductors such as molybdenum disulfide (MoS2) have
attracted tremendous interest for transistor applications. However, the fabrication of 2D …

The use of organic, oxide and low-dimensional materials in field-effect transistors has now
been studied for decades. However, properly reporting and comparing device performance …

Two-dimensional semiconductors such as layered transition metal dichalcogenides can
offer superior immunity to short-channel effects compared with bulk semiconductors such as …