This paper presents the influence of hydrogen plasma treatment on the growth of nano
crystalline silicon phase in a-SiH films. Series of hydrogenated amorphous silicon films were …

Silicon nanowires (SiNWs) are advantageous building blocks to explore a wide range of
high performance nanoelectronics and photonics devices. In-plane solid-liquid-solid (IPSLS) …

We have developed a new process to produce ultra-thin crystalline silicon films with
thicknesses in the range of 0.1− 1 μm on flexible substrates. A crystalline silicon wafer was …

We have investigated by ellipsometry the structural evolution of intrinsic and doped
hydrogenated amorphous silicon (a-Si: H) thin films during their exposure to a hydrogen …

We present an investigation on the transition from amorphous to nanocrystalline silicon and
associated hydrogen changes during the first steps of hydrogenated nanocrystalline silicon …

Two series of hydrogenated silicon thin films were deposited by the rf-magnetron sputtering
(RFMS) at relatively low growth temperatures (Ts= 100° C), in order to use the new …

This work describes a study performed on hydrogenated polymorphous silicon PIN and NIP
structures, deposited by plasma enhanced chemical vapor deposition (PECVD). We study …

this work describes the effect of silane flux on pm-Si: H films deposited by pecvd, with 3.5
torr, 210° C and silane flux between 16-40 sccm. The augment of the silane flux increase the …

This work describes the effect of temperature on pm-Si: H PIN and NIP structures deposited
by PECVD. Temperature dependent measurements were conducted to understand …

Different pm-Si: H structures were grown using PECVD technique in order to study the effect
of light exposition on solar cell structures based on these materials. PIN and NIP structures …