Assembling your nanowire: An overview of composition tuning in ternary III–V nanowires
M Ghasemi, ED Leshchenko, J Johansson - Nanotechnology, 2020 - iopscience.iop.org
The ability to grow defect-free nanowires in lattice-mismatched material systems and to
design their properties has made them ideal candidates for applications in fields as diverse …
design their properties has made them ideal candidates for applications in fields as diverse …
An overview of modeling approaches for compositional control in III–V ternary nanowires
ED Leshchenko, VG Dubrovskii - Nanomaterials, 2023 - mdpi.com
Modeling of the growth process is required for the synthesis of III–V ternary nanowires with
controllable composition. Consequently, new theoretical approaches for the description of …
controllable composition. Consequently, new theoretical approaches for the description of …
Field effect enhancement in buffered quantum nanowire networks
III–V semiconductor nanowires have shown great potential in various quantum transport
experiments. However, realizing a scalable high-quality nanowire-based platform that could …
experiments. However, realizing a scalable high-quality nanowire-based platform that could …
Study of n–i–p Axial/Core–Shell Hybrid GaAsSb Dense Nanowire-Based Near-Infrared Photodetectors on Graphene
The van der Waals epitaxy integration of III–V compound nanowires (NWs) with graphene
substrates is vital for the development of flexible, high-performance, and cost-effective …
substrates is vital for the development of flexible, high-performance, and cost-effective …
Antimony‐Rich GaAsxSb1−x Nanowires Passivated by Organic Sulfides for High‐Performance Transistors and Near‐Infrared Photodetectors
Due to their excellent properties, ternary GaAsxSb1− x nanowires have been extensively
investigated to enable various nanodevice structures. However, the surfactant effect of …
investigated to enable various nanodevice structures. However, the surfactant effect of …
Review on GaAsSb nanowire potentials for future 1D heterostructures: Properties and applications
GaAsSb nanowires (NWs) are classified as important ternary (antimony) Sb based III-V NWs
with various roles and potential to form one-dimensional heterojunction structures …
with various roles and potential to form one-dimensional heterojunction structures …
Modeling of electronic spectra and optical responses of a laser-affected double GaAsSb/GaAs parabolic quantum well using COMSOL multiphysics: the role of …
S Haghighi, A Haghighatzadeh… - Optical and Quantum …, 2023 - Springer
The intra/valence-band optoelectronic properties of a laser-dressed double GaAsSb/GaAs
parabolic quantum well were comprehensively investigated in this study. The effect of …
parabolic quantum well were comprehensively investigated in this study. The effect of …
Hybrid GaAsSb/GaAs heterostructure core–shell nanowire/graphene and photodetector applications
We report the growth of vertical, high-quality GaAs0. 9Sb0. 1 nanowires (NWs) with
improved density on oxygen (O2) plasma-treated monolayer graphene/SiO2/p-Si (111) by …
improved density on oxygen (O2) plasma-treated monolayer graphene/SiO2/p-Si (111) by …
Stoichiometric effect on electrical and near-infrared photodetection properties of full-composition-range GaAs1−xSbx nanowires
J Sun, M Han, M Peng, L Zhang, D Liu, C Miao, J Ye… - Nano Research, 2021 - Springer
As one of the most important narrow bandgap ternary semiconductors, GaAs 1− x Sb x
nanowires (NWs) have attracted extensive attention recently, due to the superior hole …
nanowires (NWs) have attracted extensive attention recently, due to the superior hole …
Sb-saturated high-temperature growth of extended, self-catalyzed GaAsSb nanowires on silicon with high quality
P Schmiedeke, M Döblinger… - …, 2023 - iopscience.iop.org
Ternary GaAsSb nanowires (NW) are key materials for integrated high-speed photonic
applications on silicon (Si), where homogeneous, high aspect-ratio dimensions and high …
applications on silicon (Si), where homogeneous, high aspect-ratio dimensions and high …