The demand for high‐performance displays is continuously increasing because of their wide
range of applications in smart devices (smartphones/watches), augmented reality, virtual …

Micro-light-emitting diodes (μ-LEDs) are regarded as the cornerstone of next-generation
display technology to meet the personalised demands of advanced applications, such as …

Abstract By alloying GaN with AlN the emission of AlGaN light-emitting diodes can be tuned
to cover almost the entire ultraviolet spectral range (210–400 nm), making ultraviolet light …

The emerging layered BiOX (X= Cl, Br, I) materials have been widely used for energy and
environmental applications. The BiOX crystal structure has been arranged by stacking of …

Great progress made by heteroepitaxial growth technology encourages rapid development
of III‐nitride heteroepitaxial structures and their applications in extensive fields. Particularly …

Recent decades have witnessed flourishing prosperity of III-nitride emitters in solid-state
lighting and high-resolution displays. As one of the widely used substrates, sapphire shows …

Reliable, efficient electrically pumped silicon-based lasers would enable full integration of
photonic and electronic circuits, but have previously only been realized by wafer bonding …

Gallium nitride (GaN) light-emitting-diode (LED) technology has been the revolution in
modern lighting. In the last decade, a huge global market of efficient, long-lasting, and …

There is growing interest in microLED devices with lateral dimensions between 1 and 10
μm. However, reductions in external quantum efficiency (EQE) due to increased …

Since the positive influences of defects on the performance of electroceramics were
discovered, investigations concerning on defects and aliovalent doping routes have grown …