Comprehensive Modeling of Advanced Composite Magnetoresistive Devices
V Sverdlov, M Bendra, B Pruckner… - … 2023-IEEE 53rd …, 2023 - ieeexplore.ieee.org
Emerging nonvolatile magnetoresistive RAM possesses high endurance and long retention
compared to its competitors. Advanced single-digit nanoscale footprint devices employ …
compared to its competitors. Advanced single-digit nanoscale footprint devices employ …
Multi-level Operation in Ultra-scaled MRAM
V Sverdlov, M Bendra, W Goes… - 2023 IEEE Latin …, 2023 - ieeexplore.ieee.org
Magnetoresistive random access memory (MRAM) prototypes demonstrate fast operation
and are suitable for the last level caches. MRAM possesses high endurance, long retention …
and are suitable for the last level caches. MRAM possesses high endurance, long retention …
Design Analysis of Ultra-Scaled MRAM Cells
S Fiorentini, WL Loch, M Bendra… - 2022 IEEE 16th …, 2022 - ieeexplore.ieee.org
Reliable simulation tools provide valuable help in the design of modern MRAM devices. We
apply a finite-element solver for the Landau-Lifshitz-Gilbert and the spin and charge drift …
apply a finite-element solver for the Landau-Lifshitz-Gilbert and the spin and charge drift …
Modeling advanced spintronic based magnetoresistive memory
S Fiorentini, M Bendra, J Ender… - … on Microwave & THz …, 2022 - ieeexplore.ieee.org
Spintronic based magnetoresistive memory shows an increasing potential in replacing
conventional charge based memory for stand-alone and embedded applications. Accurate …
conventional charge based memory for stand-alone and embedded applications. Accurate …