Effect of perylenetetracarboxylic dianhydride on the main electrical properties and interface states of Al/p-Si structures
Ş Karataş - Physica B: Condensed Matter, 2023 - Elsevier
In this our study, we were examined role on the electrical characteristics and interface state
densities of Al/p-type Si metal semiconductor (MS) structures of perylenetetracarboxylic …
densities of Al/p-type Si metal semiconductor (MS) structures of perylenetetracarboxylic …
Investigation of electrical, dielectric and interface state densities of Al/p-Si structures with PTCDA interlayer under different light intensities
Ş Karataş, F Canli, F Yakuphanoğlu - Physica B: Condensed Matter, 2024 - Elsevier
In our study; we investigated illumination intensity-dependent electrical and dielectric
properties of the Al/p-type Si metal-semiconductor (MS) structures with …
properties of the Al/p-type Si metal-semiconductor (MS) structures with …
Structural, morphological, optical and electrical characterization of MgO thin films grown by sputtering technique on different substrates
BÇ Toprak, Hİ Efkere, SŞ Aydın, A Tataroğlu… - Journal of Materials …, 2024 - Springer
Abstract Magnesium Oxide (MgO) thin film structures were deposited on glass and n-Si
substrates by means of RF magnetron sputtering technique. Structural, morphological …
substrates by means of RF magnetron sputtering technique. Structural, morphological …
The Electrical Characteristics and the Interface State Densities of Al/p-Si Structures with and Without the GO Insulator Layer
Y Aslan, H Seymen, N Berk… - Current Chinese …, 2022 - ingentaconnect.com
Introduction: The current-voltage (IV) characteristics of the Al/p-type Si Metal-Semiconductor
(MS) and Al/GO/p-type Si Metal-Oxide-Semiconductor (MOS) structure were investigated at …
(MS) and Al/GO/p-type Si Metal-Oxide-Semiconductor (MOS) structure were investigated at …