This research intends to develop an analytical model for a heterojunction graphene
nanoribbon double-gate tunnel field-effect transistor with a stacked SiO 2/HfO 2 layer …

With switching dynamics similar to synapses, resistive random access memories (RRAMs)
provide the solutions for brain-inspired computing. In this article, a compact model for a …

For the sake of promoting core–shell channel (CSC) junctionless (JL) MOSFET, this paper
models opposite doping core–shell channel (ODCSC) surrounding-gate (SG) JL MOSFET …

This paper develops a new compact model for the Q–V and C–V characteristics of cylindrical
junctionless nanowire FETs in which the nanowire radius is large enough, in such a way that …

This paper presents an analytical model for the IV and CV characteristics of cylindrical
junctionless nanowire FETs. The obtained expressions are continuous and valid for all bias …

â Diante da iminente saturação da Lei de Moore, a comunidade acadêmica se empenha na
exploração de alternativas ao MOSFET convencional de silício, seja inovando nos …

Due to the outstanding electrostatic integrity of nanowire (NW) gate all-around (GAA) field-
effect transistors (FETs), these devices have emerged as the most promising transistor …

Nanowires have gained huge interest for electronic, optic, and optoelectronic device
applications. Therefore, it is useful and important to study the charge transport methods of …