thin-film transistors (TFTs) for highly sensitive biosensing applications: a review
This review manuscript presents Thin-Film Transistors (TFTs) for various highly sensitive
biosensing applications. A low-cost, highly sensitive, early-stage diagnostic bio-sensing …
biosensing applications. A low-cost, highly sensitive, early-stage diagnostic bio-sensing …
Analog and RF performance evaluation of junctionless accumulation mode (JAM) gate stack gate all around (GS-GAA) FinFET
This work presents the analog and RF performance evaluation of Junctionless Accumulation
Mode (JAM) Gate Stack Gate All Around (GS-GAA) FinFET, and the results acquired have …
Mode (JAM) Gate Stack Gate All Around (GS-GAA) FinFET, and the results acquired have …
Influence of gate and channel engineering on multigate MOSFETs-A review
R Ramesh - Microelectronics journal, 2017 - Elsevier
The design of CMOS circuits using nanoscale MOSFET has become very difficult nowadays
as device modeling faces new challenges such as short channel effects and mobility …
as device modeling faces new challenges such as short channel effects and mobility …
TCAD temperature analysis of gate stack gate all around (GS-GAA) FinFET for improved RF and wireless performance
In this article, we investigated the impact of temperature variation on DC, analog, RF, and
wireless performance of Gate Stack Gate All Around (GS-GAA) FinFET using SILVACO Atlas …
wireless performance of Gate Stack Gate All Around (GS-GAA) FinFET using SILVACO Atlas …
TCAD RF performance investigation of transparent gate recessed channel MOSFET
In this paper, analog/RF performance and small signal behavior of Transparent Gate
Recessed Channel (TGRC) MOSFET has been investigated in terms of transconductance …
Recessed Channel (TGRC) MOSFET has been investigated in terms of transconductance …
Comprehensive analysis of sub-20 nm black phosphorus based junctionless-recessed channel MOSFET for analog/RF applications
In this work, a comprehensive analog and RF performance of a novel Black Phosphorus-
Junctionless-Recessed Channel (BP-JL-RC) MOSFET has been explored at 45 nm …
Junctionless-Recessed Channel (BP-JL-RC) MOSFET has been explored at 45 nm …
Numerical assessment of high-k spacer on symmetric S/D underlap GAA junctionless accumulation mode silicon nanowire MOSFET for RFIC design
In this work, inclusion of high-k spacer on symmetric underlap S/D junctionless silicon
nanowire (SiNW) MOSFET is studied with an aim to analyze more realistic estimation of …
nanowire (SiNW) MOSFET is studied with an aim to analyze more realistic estimation of …
Ambipolarity suppression of a double gate tunnel FET using high-k drain dielectric pocket
The paper investigates the impact of placing a high-k dielectric pocket (DP) region in the
drain of a double gate silicon TFET. The sheer existence of the high-k DP reduces the …
drain of a double gate silicon TFET. The sheer existence of the high-k DP reduces the …
Effect of trench depth and gate length shrinking assessment on the analog and linearity performance of TGRC-MOSFET
A Kumar - Superlattices and Microstructures, 2017 - Elsevier
This paper discusses the impact of trench depth (Negative Junction Depth (NJD)) and gate
length (LG) shrinking on analog and linearity performance of Transparent Gate Recessed …
length (LG) shrinking on analog and linearity performance of Transparent Gate Recessed …
Numerical simulation of analog metrics and parasitic capacitances of GaAs GS-GAA FinFET for ULSI switching applications
This paper explores the efficacy of Gallium Arsenide (GaAs) as a fin material on the analog
metrics and parasitic capacitances of Gate Stack Gate-All-Around (GS-GAA) FinFET …
metrics and parasitic capacitances of Gate Stack Gate-All-Around (GS-GAA) FinFET …