To the issue of the memristor's hrs and lrs states degradation and data retention time
AV Fadeev, KV Rudenko - Russian Microelectronics, 2021 - Springer
In this review of experimental studies, the retention time and endurance of memristor RRAM
memory elements based on reversible resistive switching in oxide dielectrics are studied …
memory elements based on reversible resistive switching in oxide dielectrics are studied …
Analysis of the Effects Influencing the Retention Time of Filament-Based Memristors
AV Fadeev, KV Rudenko - Russian Microelectronics, 2022 - Springer
A theoretical model that describes the degradation of the resistive states of the memristor
over time has been proposing. It has been showing that the current through the memristor …
over time has been proposing. It has been showing that the current through the memristor …
К вопросу о деградации состояний HRS и LRS мемристоров и времени хранения данных
АВ Фадеев, КВ Руденко - Микроэлектроника, 2021 - elibrary.ru
Представлен обзор экспериментальных работ, в которых изучается время хранения
информации и устойчивость к многократной перезаписи мемристорных элементов …
информации и устойчивость к многократной перезаписи мемристорных элементов …