Optically pumped VECSELs: review of technology and progress
M Guina, A Rantamäki… - Journal of Physics D …, 2017 - iopscience.iop.org
Vertical-external-cavity surface-emitting lasers (VECSELs) are the most versatile laser
sources, combining unique features such as wide spectral coverage, ultrashort pulse …
sources, combining unique features such as wide spectral coverage, ultrashort pulse …
Mode-locked semiconductor disk lasers
MA Gaafar, A Rahimi-Iman, KA Fedorova… - Advances in optics …, 2016 - opg.optica.org
This paper will review the recent advances in the field of ultrashort pulse generation from
optically pumped vertical-external-cavity surface-emitting lasers (OP-VECSELs). In this …
optically pumped vertical-external-cavity surface-emitting lasers (OP-VECSELs). In this …
Recent advances in VECSELs
A Rahimi-Iman - Journal of Optics, 2016 - iopscience.iop.org
Within the last two decades, vertical-external-cavity surface-emitting lasers (VECSELs) have
attracted rising interest from both industry and science. They have proven to be versatile …
attracted rising interest from both industry and science. They have proven to be versatile …
Self-mode-locked quantum-dot vertical-external-cavity surface-emitting laser
We present the first self-mode-locked optically pumped quantum-dot semiconductor disk
laser. Our mode-locked device emits sub-picosecond pulses at a wavelength of 1040 nm …
laser. Our mode-locked device emits sub-picosecond pulses at a wavelength of 1040 nm …
Mode-locking instabilities for high-gain semiconductor disk lasers based on active submonolayer quantum dots
Submonolayer quantum dots (SML QDs) combine the large gain cross section of quantum
wells (QWs) with the potential benefits of a stronger confinement. We demonstrate here an …
wells (QWs) with the potential benefits of a stronger confinement. We demonstrate here an …
InAs/InP quantum dot VECSEL emitting at 1.5 μm
K Nechay, A Mereuta, C Paranthoen, G Brévalle… - Applied Physics …, 2019 - pubs.aip.org
A high-power InAs quantum dot (QD) vertical-external-cavity surface-emitting laser emitting
at 1.5 μm is reported. The active region employs 20 layers of high-density Stranski …
at 1.5 μm is reported. The active region employs 20 layers of high-density Stranski …
High-power operation of quantum-dot semiconductor disk laser at 1180 nm
In this letter, we report on a high-power operation of an optically pumped quantum-dot
semiconductor disk laser designed for emission at 1180 nm. As a consequence of the …
semiconductor disk laser designed for emission at 1180 nm. As a consequence of the …
High-power sub-300-femtosecond quantum dot semiconductor disk lasers
Self-assembled quantum dots (QDs) as active media for ultrafast semiconductor disk laser
offer large gain bandwidths, fast gain dynamics, and high temperature stability. We report on …
offer large gain bandwidths, fast gain dynamics, and high temperature stability. We report on …
Low Threshold 1550-nm Emitting QD Optically Pumped VCSEL
C Paranthoen, C Levallois, G Brevalle… - IEEE Photonics …, 2020 - ieeexplore.ieee.org
We present the first demonstration of a vertical cavity surface emitting laser (VCSEL) based
on InAs quantum dots (QDs) on InP. A very high density of 10 11 cm-2 per QD layer, and a …
on InAs quantum dots (QDs) on InP. A very high density of 10 11 cm-2 per QD layer, and a …
Quantum dot semiconductor disk laser at 1.3 μm
A Rantamäki, GS Sokolovskii, SA Blokhin… - Optics Letters, 2015 - opg.optica.org
We present a semiconductor disk laser (SDL) emitting at the wavelength of 1.3 μm. The
active region of the SDL comprises InAs quantum dots (QDs) that are embedded into InGaAs …
active region of the SDL comprises InAs quantum dots (QDs) that are embedded into InGaAs …