Subthreshold modeling of triple material gate-all-around junctionless tunnel FET with germanium and high-K gate dielectric material
L Priya - Informacije MIDEM, 2018 - ojs.midem-drustvo.si
In this paper, a subthreshold analytical model for Triple Material Gate-All-Around (TMGAA)
Junctionless Tunnel FET (JLTFET) with Germanium and High-K gate dielectric material is …
Junctionless Tunnel FET (JLTFET) with Germanium and High-K gate dielectric material is …
Effect of InSb/In0. 9Al0. 1Sb superlattice buffer layer on the structural and electronic properties of InSb films
X Zhao, Y Zhang, M Guan, L Cui, B Wang, Z Zhu… - Journal of Crystal …, 2017 - Elsevier
Abstract The effect of InSb/In 0.9 Al 0.1 Sb buffer layers on InSb thin films grown on GaAs (0
0 1) substrate by molecular beam epitaxy (MBE) is investigated. The crystal quality and the …
0 1) substrate by molecular beam epitaxy (MBE) is investigated. The crystal quality and the …
Nonlinear radiation response of n-doped indium antimonide and indium arsenide in intense terahertz field
JL Gong, JS Liu, Z Chu, ZG Yang, KJ Wang… - Chinese Physics …, 2016 - iopscience.iop.org
The nonlinear radiation responses of two different n-doped bulk semiconductors: indium
antimonide (InSb) and indium arsenide (InAs) in an intense terahertz (THz) field are studied …
antimonide (InSb) and indium arsenide (InAs) in an intense terahertz (THz) field are studied …