A Perspective View of Silicon Based Classical to Non-Classical MOS Transistors and their Extension in Machine Learning
Unprecedented growth in CMOS technology and demand of high-density integrated circuits
(ICs) in semiconductor industry has motivated to research community towards the …
(ICs) in semiconductor industry has motivated to research community towards the …
Trap and self-heating effect based reliability analysis to reveal early aging effect in nanosheet FET
The reliability of the CMOS devices is severely affected due to the presence of interface (S
i/S i O 2) trap charges and self-heating effect (SHE). In this paper, we investigated the trap …
i/S i O 2) trap charges and self-heating effect (SHE). In this paper, we investigated the trap …
Reliability of TCAD study for HfO2-doped Negative capacitance FinFET with different Material-Specific dopants
Attaining the ferroelectric (FE) polarization in a thin HfO 2 layer using a specific dopant is a
widely adopted way to realize Negative Capacitance (NC) FET. In a general TCAD …
widely adopted way to realize Negative Capacitance (NC) FET. In a general TCAD …
A comprehensive analysis of nanosheet FET and its CMOS circuit applications at elevated temperatures
NA Kumari, P Prithvi - Silicon, 2023 - Springer
Abstract The Nanosheet Field Effect Transistor (NSFET) has been shown to be a viable
candidate for sub-7-nm technology nodes. This paper assesses and compares the NSFET …
candidate for sub-7-nm technology nodes. This paper assesses and compares the NSFET …
Analog/RF and linearity performance assessment of a negative capacitance FinFET using high threshold voltage techniques
The continued exploration of the ferroelectric-based negative capacitance field effect
transistor (NCFET) for energy-efficient and higher current drivability merits has called for an …
transistor (NCFET) for energy-efficient and higher current drivability merits has called for an …
Investigation of self-heating effect in tree-FETs by interbridging stacked nanosheets: a reliability perspective
S Srivastava, M Shashidhara… - IEEE Transactions on …, 2022 - ieeexplore.ieee.org
This work comprehensively investigates the self-heating effects (SHEs) in Tree-FET at 5nm
technological nodes. A comparative analysis of Tree-FET with Nanosheet FET (NSFET) …
technological nodes. A comparative analysis of Tree-FET with Nanosheet FET (NSFET) …
Self-heating and interface traps assisted early aging revelation and reliability analysis of negative capacitance FinFET
The realization of a Negative Capacitance (NC) phenomenon in TCAD, considering several
realistic aspects of transport physics, remains challenging. In this paper, we investigated the …
realistic aspects of transport physics, remains challenging. In this paper, we investigated the …
Substrate BOX engineering to mitigate the self-heating induced degradation in nanosheet transistor
The continued scaling of 3D transistors into the ultra-scaled-down nanoscale regime causes
self-heating effect (SHE) driven thermal deterioration. Particularly in silicon-on-insulator …
self-heating effect (SHE) driven thermal deterioration. Particularly in silicon-on-insulator …
Self-heating aware threshold voltage modulation conforming to process and ambient temperature variation for reliable nanosheet FET
Internal and external process variations severely affect the device threshold voltage (V_th)
and, in turn, the device's reliability. For the first time, this paper presented a thorough …
and, in turn, the device's reliability. For the first time, this paper presented a thorough …
[HTML][HTML] Random ferroelectric and dielectric phase distribution-induced device variation of negative capacitance field-effect transistors
W Lü, D Chen, C Zhang, W Wei, Y Han - Results in Physics, 2023 - Elsevier
Negative-capacitance field-effect transistors (NC-FETs) are significantly affected by their
ferroelectric (FE)/dielectric (DE) phase configurations owing to the uncertainty of their …
ferroelectric (FE)/dielectric (DE) phase configurations owing to the uncertainty of their …