(57) ABSTRACT A semiconductor material which has a high carbon dopant concentration
and is composed of gallium, indium, arsenic and nitrogen is disclosed. The material is useful …

A bipolar transistor includes a base layer design and a method for fabricating such a bipolar
transistor that employ a built-in accelerating field focused on a base region adjacent to a …

The fundamental lower limit on the turn on voltage of GaAs-based bipolar transistors is first
established, then reduced with the use of a novel low energy-gap base material, Ga/sub 1 …

This paper describes a novel heterojunction bipolar transistor (HBT) structure, the collector-
up tunneling-collector HBT (C-up TC-HBT), that minimizes the offset voltage V/sub CE …

Related US Application Data Reynolds, PC (63) Continuation-in-part of application No.
10/121.444,(57) ABSTRACT filed on Apr. 10, 2002, now Pat. No. 6,847,060, which is a …

(57) ABSTRACT A Semiconductor material which has a high carbon dopant concentration
includes gallium, indium, arsenic and nitro gen. The disclosed Semiconductor materials …

(HBT's) are demonstrated to have excellent dc and RF properties comparable to
InGaP/GaAs HBT's by increasing the Al composition. Al0 35Ga0 65As/GaAs HBT's exhibit …

Abstract Characteristics of InGaP/GaAs heterojunction bipolar transistors (HBTs) with a
heavily doped base are examined at the base doping level NB ranging from 5× 10 19 to 5× …

We report on the tradeoff between current gain β and the base sheet resistance R SH in
metalorganic chemical vapor deposition-grown NpN InP∕ GaAs 1− x Sb x∕ InP double …

We have developed an InGaP/GaInAsN/GaAs double heterojunction bipolar transistor
technology that substantially improves upon existing GaAs-based HBTs. Band-gap …