A Decade of Nonpolar and Semipolar III‐Nitrides: A Review of Successes and Challenges

M Monavarian, A Rashidi, D Feezell - physica status solidi (a), 2019 - Wiley Online Library
The performance of III‐nitride devices is degraded by polarization in a wurtzite crystal
structure. Nonpolar and semipolar III‐nitrides have been extensively studied since the early …

Porous nitride semiconductors reviewed

PH Griffin, RA Oliver - Journal of Physics D: Applied Physics, 2020 - iopscience.iop.org
Porous nitride semiconductors are a fast-developing area of study, which open up a wide
range of new properties and applications, including strain free optical reflectors, chemical …

Theoretical evaluation of the refractive index sensing capability using the coupling of Tamm–Fano resonance in one-dimensional photonic crystals

ZA Zaky, A Sharma, S Alamri, AH Aly - Applied Nanoscience, 2021 - Springer
Biophotonic sensing techniques are an accurate best way for biosensing measurements.
The main aim of the proposed device is to make a more effective sensor to detect the …

Distributed Bragg reflectors for GaN-based vertical-cavity surface-emitting lasers

C Zhang, R ElAfandy, J Han - Applied Sciences, 2019 - mdpi.com
Featured Application GaN based vertical-cavity surface-emitting lasers. Abstract A
distributed Bragg reflector (DBR) is a key building block in the formation of semiconductor …

Detection of glucose concentrations in urine based on coupling of Tamm–Fano resonance in photonic crystals

M Al-Dossari, ZA Zaky, SK Awasthi, HA Amer… - Optical and Quantum …, 2023 - Springer
Glucose in urine sensors are important bio-photonic devices and are used for monitoring the
glucose concentration level within the human body through urine samples. They do not …

Porous semiconductor compounds

E Monaico, I Tiginyanu, V Ursaki - Semiconductor Science and …, 2020 - iopscience.iop.org
In this review paper, we present a comparative analysis of the electrochemical dissolution of
III–V (InP, GaAs, GaN), II–VI (ZnSe, CdSe) and SiC semiconductor compounds. The …

Chip-scale GaN integration

KH Li, WY Fu, HW Choi - Progress in quantum electronics, 2020 - Elsevier
Abstract Blue LEDs and HEMTs based on III-Nitride have been flourishing commercially
across the globe, thanks largely to breakthroughs in the material quality of the wide …

Electrically injected nonpolar GaN-based VCSELs with lattice-matched nanoporous distributed Bragg reflector mirrors

SM Mishkat-Ul-Masabih, AA Aragon… - Applied Physics …, 2019 - iopscience.iop.org
We demonstrate the first electrically injected nonpolar m-plane GaN-based vertical-cavity
surface-emitting lasers (VCSELs) with lattice-matched nanoporous bottom DBRs. Lasing …

Defected photonic crystal array using porous GaN as malaria sensor

MT Tammam, ZA Zaky, A Sharma… - IOP Conference …, 2021 - iopscience.iop.org
A defective one-dimensional photonic crystal is investigated as a biosensor to detect malaria
disease. The proposed photonic structure is air/(GaN/Porous GaN) N/Sample/(GaN/Porous …

[HTML][HTML] Dislocations as channels for the fabrication of sub-surface porous GaN by electrochemical etching

FCP Massabuau, PH Griffin, HP Springbett, Y Liu… - APL Materials, 2020 - pubs.aip.org
Porosification of nitride semiconductors provides a new paradigm for advanced engineering
of the properties of optoelectronic materials. Electrochemical etching creates porosity in …