A Decade of Nonpolar and Semipolar III‐Nitrides: A Review of Successes and Challenges
The performance of III‐nitride devices is degraded by polarization in a wurtzite crystal
structure. Nonpolar and semipolar III‐nitrides have been extensively studied since the early …
structure. Nonpolar and semipolar III‐nitrides have been extensively studied since the early …
Porous nitride semiconductors reviewed
PH Griffin, RA Oliver - Journal of Physics D: Applied Physics, 2020 - iopscience.iop.org
Porous nitride semiconductors are a fast-developing area of study, which open up a wide
range of new properties and applications, including strain free optical reflectors, chemical …
range of new properties and applications, including strain free optical reflectors, chemical …
Theoretical evaluation of the refractive index sensing capability using the coupling of Tamm–Fano resonance in one-dimensional photonic crystals
Biophotonic sensing techniques are an accurate best way for biosensing measurements.
The main aim of the proposed device is to make a more effective sensor to detect the …
The main aim of the proposed device is to make a more effective sensor to detect the …
Distributed Bragg reflectors for GaN-based vertical-cavity surface-emitting lasers
Featured Application GaN based vertical-cavity surface-emitting lasers. Abstract A
distributed Bragg reflector (DBR) is a key building block in the formation of semiconductor …
distributed Bragg reflector (DBR) is a key building block in the formation of semiconductor …
Detection of glucose concentrations in urine based on coupling of Tamm–Fano resonance in photonic crystals
Glucose in urine sensors are important bio-photonic devices and are used for monitoring the
glucose concentration level within the human body through urine samples. They do not …
glucose concentration level within the human body through urine samples. They do not …
Porous semiconductor compounds
In this review paper, we present a comparative analysis of the electrochemical dissolution of
III–V (InP, GaAs, GaN), II–VI (ZnSe, CdSe) and SiC semiconductor compounds. The …
III–V (InP, GaAs, GaN), II–VI (ZnSe, CdSe) and SiC semiconductor compounds. The …
Electrically injected nonpolar GaN-based VCSELs with lattice-matched nanoporous distributed Bragg reflector mirrors
SM Mishkat-Ul-Masabih, AA Aragon… - Applied Physics …, 2019 - iopscience.iop.org
We demonstrate the first electrically injected nonpolar m-plane GaN-based vertical-cavity
surface-emitting lasers (VCSELs) with lattice-matched nanoporous bottom DBRs. Lasing …
surface-emitting lasers (VCSELs) with lattice-matched nanoporous bottom DBRs. Lasing …
Defected photonic crystal array using porous GaN as malaria sensor
A defective one-dimensional photonic crystal is investigated as a biosensor to detect malaria
disease. The proposed photonic structure is air/(GaN/Porous GaN) N/Sample/(GaN/Porous …
disease. The proposed photonic structure is air/(GaN/Porous GaN) N/Sample/(GaN/Porous …
[HTML][HTML] Dislocations as channels for the fabrication of sub-surface porous GaN by electrochemical etching
FCP Massabuau, PH Griffin, HP Springbett, Y Liu… - APL Materials, 2020 - pubs.aip.org
Porosification of nitride semiconductors provides a new paradigm for advanced engineering
of the properties of optoelectronic materials. Electrochemical etching creates porosity in …
of the properties of optoelectronic materials. Electrochemical etching creates porosity in …