Aluminum nitride (AlN) is a technologically relevant material that can be deposited at low
temperatures in the form of thin-films while preserving most of its physical properties …

Recent research results pertaining to InN, GaN and AlN are reviewed, focusing on the
different growth techniques of Group III-nitride crystals and epitaxial films, heterostructures …

Thermal management is one of the main challenges for the future of electronics,,,–. With the
ever-increasing rate of data generation and communication, as well as the constant push to …

The role of extended and point defects, and key impurities such as C, O, and H, on the
electrical and optical properties of GaN is reviewed. Recent progress in the development of …

The wet etching of GaN, AlN, and SiC is reviewed including conventional etching in
aqueous solutions, electrochemical etching in electrolytes and defect-selective chemical …

The group III nitrides (AlN, GaN and InN) represent an important trio of semiconductors
because of their direct band gaps which span the range 1.95-6.2 eV, including the whole of …

This paper demonstrates super high frequency (SHF) Lamb and surface acoustic wave
resonators based on single-crystal orientation Aluminum Scandium Nitride (AlScN) thin films …

Laser-enhanced, room-temperature wet etching of GaN using either dilute HCl: H2O 1: 10 or
45% KOH: H2O1: 3 is reported. Etch rates of a few hundred Å/min HCl and up to a few …

We demonstrate well-controlled crystallographic etching of wurtzite GaN grown on c-plane
sapphire using H 3 PO 4, molten KOH, KOH dissolved in ethylene glycol, and NaOH …

We experimentally demonstrate the formation of GaN nanotip pyramids by selective and
anisotropic etching of N-polar GaN in KOH solution. For samples grown with adjacent Ga …