Silicon carbide (SiC) metal-oxide-semiconductor field-effect transistors (MOSFETs) are
becoming increasingly important in numerous renewable energy applications that inherently …

In the context of renewable energy generation, compact and efficient electric power
conversion is becoming increasingly important. Due to their low-loss switching capability at …

Semiconductor manufacturers and researchers have recently revealed that under specific
bipolar gate switching conditions SiC MOSFETs exhibit parameter drift dynamics different …

Switching a silicon carbide (SiC) metal–oxide–semiconductor field-effect transistor between
inversion and accumulation with removed drain and grounded source terminals leads to …

To reach the theoretical performance limit of 4HSiCMOSFETs the SiC/SiO2interfacedefects
along the inversion channel need to be fully identified in order to be avoided. We employa …

Fully processed SiC power MOSFETs emit light during switching of the gate terminal, while
the drain and source terminals are both grounded. The emitted photons are caused by …

The high density of interface and border traps is responsible for the reduced mobility and
threshold voltage instabilities in state-of-the-art SiC power devices. In this work, we have …

4H-SiC/SiO 2 interface states play a major role in the performance and reliability of modern
4H-SiC metal–oxide–semiconductor field effect transistors (MOSFETs). To gain new insights …

For a reliable MOSFET performance it is crucial to identify and reduce device performance
limiting 4H-SiC/SiO2 interface defects. Previous studies have focused on the quantification …

As 2023 draws to a close, we highlight some of the great stories of engineering insight and
solutions that we have published over the year. The final selection covers topics from across …