A three-dimensional memory device includes an alternating stack of insulating layers and
electrically conductive layers located over a substrate, the alternating stack having a …

(57) ABSTRACT A semiconductor device may include gate structures spaced apart above a
top surface of a Substrate. The gate structures may include a horizontal electrode extending …

A three-dimensional memory device includes an alternating stack of insulating layers and
electrically conductive layers located over a substrate and memory stack structures …

A trench can be formed through a stack of alternating plurality of first material layers and
second material layers. A dielectric material liner and a trench fill material portion can be …

H01L23/522—Arrangements for conducting electric current within the device in operation
from one component to another, ie interconnections, eg wires, lead frames including …

(57) ABSTRACT A three-dimensional (3D) semiconductor device includes a stack structure
including first and second stacks stacked on a substrate. Each of the first and second stacks …

BACKGROUND Recently, three-dimensional semiconductor devices have been developed
to manufacture highly integrated devices. Since three-dimensional semiconductor devices …

A method of forming a semiconductor device assembly comprises forming tiers comprising
conductive structures and insulating structures in a stacked arrangement over a substrate …

A semiconductor memory device includes a substrate including a cell region and an
interconnection region, adjacent first and second rows of vertical channels extending …

A semiconductor device may include interlayer insulating layers stacked in a first direction
and separated from each other, word lines formed between the interlayer insulating layers …