Atom probe tomography of electronic materials
TF Kelly, DJ Larson, K Thompson, RL Alvis… - Annu. Rev. Mater …, 2007 - annualreviews.org
The state of application of atom probe tomography to electronic materials is assessed. The
benefits and challenges of the technique are discussed with regard to its impact on this field …
benefits and challenges of the technique are discussed with regard to its impact on this field …
Evolution of total ionizing dose effects in MOS devices with Moore's law scaling
DM Fleetwood - IEEE Transactions on Nuclear Science, 2017 - ieeexplore.ieee.org
The general reduction in the thicknesses of critical dielectric layers driven by Moore's law
scaling has led to increasingly more manageable total-ionizing-dose (TID) response over …
scaling has led to increasingly more manageable total-ionizing-dose (TID) response over …
Modeling of gate stack patterning for advanced technology nodes: A review
X Klemenschits, S Selberherr, L Filipovic - Micromachines, 2018 - mdpi.com
Semiconductor device dimensions have been decreasing steadily over the past several
decades, generating the need to overcome fundamental limitations of both the materials …
decades, generating the need to overcome fundamental limitations of both the materials …
[图书][B] Silicon Heterostructure Handbook: Materials, Fabrication, Devices, Circuits and Applications of SiGe and Si Strained-Layer Epitaxy
JD Cressler, S Monfray, G Freeman, D Friedman… - 2018 - taylorfrancis.com
An extraordinary combination of material science, manufacturing processes, and innovative
thinking spurred the development of SiGe heterojunction devices that offer a wide array of …
thinking spurred the development of SiGe heterojunction devices that offer a wide array of …
[HTML][HTML] Effect of probe geometry during measurement of> 100 A Ga2O3 vertical rectifiers
The high breakdown voltage and low on-state resistance of Schottky rectifiers fabricated on
β-Ga 2 O 3 leads to low switching losses, making them attractive for power inverters. One of …
β-Ga 2 O 3 leads to low switching losses, making them attractive for power inverters. One of …
Diffusion of dopants and impurities in β-Ga2O3
The understanding and availability of quantitative measurements of the diffusion of dopants
and impurities in Ga 2 O 3 are currently at an early stage. In this work, we summarize what is …
and impurities in Ga 2 O 3 are currently at an early stage. In this work, we summarize what is …
Radiation damage in the ultra-wide bandgap semiconductor Ga2O3
We present a review of the published experimental and simulation radiation damage results
in Ga 2 O 3. All of the polytypes of Ga 2 O 3 are expected to show similar radiation …
in Ga 2 O 3. All of the polytypes of Ga 2 O 3 are expected to show similar radiation …
A Quantitative Model for ELDRS and Degradation Effects in Irradiated Oxides Based on First Principles Calculations
NL Rowsey, ME Law, RD Schrimpf… - … on Nuclear Science, 2011 - ieeexplore.ieee.org
A physics-based TCAD model for enhanced low-dose-rate sensitivity in linear bipolar
devices is developed. Quantitative agreement is found with measured data over a wide …
devices is developed. Quantitative agreement is found with measured data over a wide …
Single-event damages caused by heavy ions observed in AlGaN/GaN HEMTs
S Kuboyama, A Maru, H Shindou… - … on Nuclear Science, 2011 - ieeexplore.ieee.org
It was demonstrated that several kinds of permanent damage were introduced by heavy ions
in AlGaN/GaN HEMTs similar to SiC devices. A new mode of damage attributable to the …
in AlGaN/GaN HEMTs similar to SiC devices. A new mode of damage attributable to the …
Thermal simulations of high current β-Ga2O3 Schottky rectifiers
The temperature rise and distribution in large area β-Ga 2 O 3 rectifiers is simulated using
self-consistent solution of the partial differential equations governing the physics in the …
self-consistent solution of the partial differential equations governing the physics in the …