Statistical Reproducibility of Selective Area Grown InAs Nanowire Devices
New approaches such as selective area growth (SAG), where crystal growth is
lithographically controlled, allow the integration of bottom-up grown semiconductor …
lithographically controlled, allow the integration of bottom-up grown semiconductor …
Spontaneous formation of monocrystalline nanostripes in the molecular beam epitaxy of antimony triselenide
Self-assembled, highly anisotropic nanostructures are spontaneously formed in the
molecular beam epitaxy of antimony triselenide on GaAs substrates. These one dimensional …
molecular beam epitaxy of antimony triselenide on GaAs substrates. These one dimensional …