The move to implement metal oxide based gate dielectrics in a metal-oxide-semiconductor
field effect transistor is considered one of the most dramatic advances in materials science …

Plasma etching processes at the 22 nm technology node and below will have to satisfy
multiple stringent scaling requirements of microelectronics fabrication. To satisfy these …

Semiconductor device dimensions have been decreasing steadily over the past several
decades, generating the need to overcome fundamental limitations of both the materials …

According to Moore's Law, not only does the number of transistors in an integrated circuit
double every two years, but transistor size also decreases at a predictable rate. At the rate …

Electro-Fenton (EF) process is promising for achieving satisfactory oxidation of organic
contaminants. However, the sluggish kinetics of in situ production of H2O2 and slow rate of …

This article discusses the possibilities of two methods for monitoring Physical Vapor
Deposition (PVD) process parameters: multi-grid probe, which makes it possible, in …

The dynamic of charged particles in pulsed plasma is relatively well known since the 1990s.
In contrast, works reporting on the impact of the plasma modulation frequency and duty cycle …

Plasma–surface interactions in Cl-and Br-based plasmas have been studied for advanced
front-end-of-line (FEOL) etching processes in nanoscale ULSI device fabrication. A Monte …

The etching of HfO 2 and ZrO 2 high-k dielectrics is studied using plasma enhanced atomic
layer etching. The etching method relies on a continuous argon inductively coupled plasma …

Disclosed are processes of removing layers from substrates using fluorinated reactants
having the formula MFx (adduct) n, wherein x ranges from 2 to 6 inclusive; n ranges from 0 to …