Wide bandgap aluminum gallium nitride (AlGaN) semiconductor alloys have established
themselves as the key materials for building ultraviolet (UV) optoelectronic and power …

Conventional silicon (Si)-based power devices face physical limitations—such as switching
speed and energy efficiency—which can make it difficult to meet the increasing demand for …

An atomic layer etching (ALE) technique for InAlN/AlN/GaN structure was investigated for the
first time. Different recipes with O 2 modification times of 30–180 s and BCl 3 removal RF …

In this work we present the influence of in situ deposited non-continous SiN layer and the
chemical precursors III/V mole ratio change during GaN buffer growth for AlGaN/GaN/Si …

This letter demonstrates a novel enhancement-mode (E-mode) tri-gate nanowire InAlN/GaN
MOSHEMT with ultrasonic spray pyrolysis deposition (USPD) deposited Al 2 O 3 as the gate …

Abstract We have demonstrated 0.17-µm gate-length In 0.17 Al 0.83 N/GaN high-electron-
mobility transistors (HEMTs) on Si (111) substrates using a non-gold metal stack …

AlInN film was grown on n-type GaAs (100) substrate by using reactive magnetron co-
sputtering technique at 100 C. The structural analysis revealed polycrystalline nature of the …

Indium-rich InAlN films were prepared on Si (111) substrates by using reactive co-sputtering
in a mixed Ar-N 2 atmosphere. The substrate temperature was varied from room temperature …

This study demonstrates an enhancement-mode (E-mode) InAlN/GaN MOSHEMT on a
silicon substrate with a Schottky tri-drain extension (STDE) to yield a large breakdown …

Quantum dot and quantum dash (QDash) lasers exhibit lower threshold, less temperature
sensitivity, and larger modulation bandwidths than the conventional quantum well lasers …