This article provides an overview of recent development of sputtering method for high-quality
III-nitride semiconductor materials and devices. Being a mature deposition technique widely …

Heteroepitaxy of high-quality AlN film is the key to advance the prosperity of deep-ultraviolet
(DUV) devices when a large-size and low-cost native substrate is unavailable. Here, we …

Thermal annealing process of sputtered AlN films with different thicknesses on sapphire
substrates was studied in N 2 ambient. Crystal quality of these AlN films was significantly …

High-performance nonpolar a-plane GaN-based metal–semiconductor–metal (MSM)
ultraviolet (UV) photo-detectors are fabricated based on high-quality nonpolar a-plane GaN …

The strain relaxation of sputter-deposited AlN (sp-AlN) films on c-plane sapphire substrates
before and after face-to-face annealing (FFA) was evaluated. After FFA, the AlN films …

Gallium nitride (GaN) epitaxial films on sapphire (Al 2 O 3) substrates have been grown
using reactive magnetron sputter epitaxy with a liquid Ga target. Threading dislocations …

Group III-nitride semiconductors have been subject of intensive research, resulting in the
maturing of the material system and adoption of III-nitrides in modern optoelectronics and …

We report the molecular beam epitaxy growth and characterization of aluminum gallium
nitride (AlGaN) epilayer on an Si substrate. The AlGaN epilayer was grown on an AlN buffer …

Abstract∼ 500 nm-thick c-plane and a-plane GaN epitaxial films on c-plane and r-plane
sapphire substrates by pulsed laser deposition have been grown and explored. The∼ 500 …

The epitaxial growth of an AlN layer on a Si (111) substrate at room temperature by DC
magnetron sputtering was investigated. The predeposition of a 5-nm-thick Al layer on the Si …