This paper reviews the design of watt-level integrated CMOS RF power amplifiers (PAs) and
state-of-the-art results in the literature. To reach watt-level output power from a single-chip …

In this paper, the potential of load adaptation for enhanced backoff efficiency in RF power
amplifiers (PAs) has been investigated through a 0.13-μm silicon-on-insulator (SOI) CMOS …

A novel Model Order Reduction approach for the construction of Dynamic Compact Thermal
Models is presented. With respect to previous approaches, this methodology allows …

The influence of energy band structure on the electrical characteristics of GaN-based double-
heterojunction bipolar transistors (DHBTs) has been studied through both simulation and …

This letter describes a design of a 3.3–3.6-GHz GaAs heterojunction bipolar transistor (HBT)
power amplifier (PA) with high linearity and temperature insensitivity for the fifth-generation …

A fully monolithic 2 times 2 (2 times 5 GHz-band, 2 times 2.4 GHz-band) power amplifier
(PA) implemented in a 0.18 mum Silicon Germanium (SiGe) HBT process has been …

The last decade has seen GaAs HBTs emerge as the dominant technology in wireless
handset power amplifiers. Modern application requirements and size limitations have driven …

Mobile phone systems continue to evolve from the 2nd generation, which began in the early
1990s, to the 5th generation, which is now in service. Along with this evolution, the power …

The first official shift in communication systems from fixed-location devices to
portable/mobile devices happened in 1973 when Martin Cooper, general manager of …

This paper presents three procedures for the extraction of parametric Dynamic Compact
Thermal Models (DCTMs) with controlled and user-chosen accuracy, namely,(i) a DCTM …