Residual strain plays a critical role in determining the crystalline quality of nitride epitaxial
layers and in modifying their band structure; this often leads to several interesting physical …

Multi-color and broadband visible emission was realized thorough the hexagonal annular
structure of GaN. The annular structure fabricated by selective-area growth emitted purple …

We have measured and analyzed the photoluminescence spectra from InGaN/GaN multiple
quantum wells. Emission peaks due to recombination of the photogenerated carriers …

By using pulsed driving currents with a small duty cycle, the high-energy wing of the
electroluminescence band in AlGaInP and InGaN high-power light-emitting diodes (LEDs) …

Abstract Photoreflectance (PR), photoluminescence (PL) and time-resolved PL were applied
to study the optical properties, particularly the localized and delocalized states and carrier …

An ultrathin (one monolayer thick) InN single quantum well (SQW) formed on a step-free
GaN surface shows very sharp violet PL emission. The size (16 μm in diameter) is large …

We report on diffusion-driven and excitation-dependent carrier recombination rate in
multiple InGaN/GaN quantum wells by using photoluminescence, light-induced absorption …

We present results based on quantum mechanical estimates of the longest emission
wavelength for nitride laser diodes grown on c-plane GaN/sapphire substrates. The results …

The experimental ascertainment of band alignment type for semiconductor heterostructures
with diffused interfaces is discussed. A method based on the analysis of the spectral shift of …

To shift the emission band to long wavelength side, InGaN/GaN multiple quantum wells
were grown by metalorganic chemical vapor deposition (MOCVD) using pulsed delivery of …