Data-centric applications are pushing the limits of energy-efficiency in today's computing
systems, including those based on phase-change memory (PCM). This technology must …

Phase‐change memory (PCM) is a promising candidate for neuro‐inspired, data‐intensive
artificial intelligence applications, which relies on the physical attributes of PCM materials …

Lead zirconate titanate (PZT) is the promising candidate in advanced ferroelectric memory
application due to its excellent piezoelectricity, ferroelectricity, pyroelectricity, non-linear …

In the era of big data, the amount of global data is increasing exponentially, and the storage
and processing of massive data put forward higher requirements for memory. To deal with …

Flexible information memory is the key component of flexible electronic devices and the core
of intelligent wearable devices. In this paper, Ge/Sb multilayer phase change films of various …

The phase change memory (PCM) device has spotlighted as a candidate group for storage
class memory devices and neuromorphic devices. However, the conventional GST‐based …

We characterized resistance drift in phase change memory devices in the 80 K to 300 K
temperature range by performing measurements on 20 nm thick,∼ 70–100 nm wide lateral …

In this work, we investigated the phase transition characteristics of Ge-doped Sb 2 Te 3
phase change films prepared by the magnetron sputtering method. During the crystallization …

Operation speed, data retention, thickness variation, and resistance drift are main shortages
for conventional Ge 2 Sb 2 Te 5 based phase change memory (PCM). In this Letter, we …

Spiking neural networks (SNNs) with phase change memory (PCM) devices are promising
for in-memory computing, but their performance is often constrained by the abrupt …