A perspective on nanowire photodetectors: current status, future challenges, and opportunities
VJ Logeeswaran, J Oh, AP Nayak… - IEEE Journal of …, 2011 - ieeexplore.ieee.org
One-dimensional semiconductor nanostructures (nanowires (NWs), nanotubes, nanopillars,
nanorods, etc.) based photodetectors (PDs) have been gaining traction in the research …
nanorods, etc.) based photodetectors (PDs) have been gaining traction in the research …
InP nanowire/polymer hybrid photodiode
CJ Novotny, ET Yu, PKL Yu - Nano Letters, 2008 - ACS Publications
A novel design is presented for a nanowire/polymer hybrid photodiode. n-InP nanowires are
grown directly onto an indium tin oxide (ITO) electrode to increase carrier collection …
grown directly onto an indium tin oxide (ITO) electrode to increase carrier collection …
Growth and photoelectrochemical energy conversion of wurtzite indium phosphide nanowire arrays
Photoelectrochemical (PEC) water splitting into hydrogen and oxygen is a promising
strategy to absorb solar energy and directly convert it into a dense storage medium in the …
strategy to absorb solar energy and directly convert it into a dense storage medium in the …
Self-catalyzed epitaxial growth of vertical indium phosphide nanowires on silicon
Vertical indium phosphide nanowires have been grown epitaxially on silicon (111) by
metalorganic vapor-phase epitaxy. Liquid indium droplets were formed in situ and used to …
metalorganic vapor-phase epitaxy. Liquid indium droplets were formed in situ and used to …
A 14-ps full width at half maximum high-speed photoconductor fabricated with intersecting InP nanowires on an amorphous surface
VJ Logeeswaran, A Sarkar, MS Islam, NP Kobayashi… - Applied Physics A, 2008 - Springer
We demonstrate a high-speed polarization-insensitive photoconductor based on
intersecting InP nanowires synthesized between a pair of hydrogenated silicon electrodes …
intersecting InP nanowires synthesized between a pair of hydrogenated silicon electrodes …
Harvesting and transferring vertical pillar arrays of single-crystal semiconductor devices to arbitrary substrates
VJ Logeeswaran, AM Katzenmeyer… - IEEE Transactions on …, 2010 - ieeexplore.ieee.org
Development of devices that can be fabricated on amorphous substrates using multiple
single-crystal semiconductors with different physical, electrical, and optical characteristics is …
single-crystal semiconductors with different physical, electrical, and optical characteristics is …
Optical properties of indium phosphide nanowire ensembles at various temperatures
AJ Lohn, T Onishi, NP Kobayashi - Nanotechnology, 2010 - iopscience.iop.org
Ensembles that contain two types (zincblende and wurtzite) of indium phosphide nanowires
grown on non-single crystalline surfaces were studied by micro-photoluminescence and …
grown on non-single crystalline surfaces were studied by micro-photoluminescence and …
GaAs nanowire growth on polycrystalline silicon thin films using selective-area MOVPE
The growth mechanism of GaAs nanowires (NWs) grown on polycrystalline silicon (poly-Si)
thin films using selective-area metalorganic vapor-phase epitaxy was investigated. Wire …
thin films using selective-area metalorganic vapor-phase epitaxy was investigated. Wire …
Methods of forming nanostructures on metal-silicide crystallites, and resulting structures and devices
N Kobayashi, SY Wang - US Patent 7,754,600, 2010 - Google Patents
BACKGROUND Manufacturers and designers of integrated circuits con tinue to relentlessly
decrease the size of integrated-circuit features, such as transistors and signal lines, and …
decrease the size of integrated-circuit features, such as transistors and signal lines, and …
Facile Synthesis and Tensile Behavior of TiO2 One-Dimensional Nanostructures
SS Amin, S Li, X Wu, W Ding, TT Xu - Nanoscale research letters, 2010 - Springer
High-yield synthesis of TiO 2 one-dimensional (1D) nanostructures was realized by a simple
annealing of Ni-coated Ti grids in an argon atmosphere at 950° C and 760 torr. The as …
annealing of Ni-coated Ti grids in an argon atmosphere at 950° C and 760 torr. The as …